Solid State Sensors Closed Loop Current Sensors

DESCRIPTION These new industrial current sensors extend Honeywell’s closed loop current sensing capability. They offer increased current measuring capability up to 1000Aover an extended temperature range of -40°C to +85°C and are available with different terminal options. The sensors are clo

Solid State Sensors Closed Loop Current Sensors

CLOSED LOOP SENSORS\nClosed loop current sensors measure AC, DC and impulse currents over 0-25, 0-50, 0-100, 0-600 and 0-1200 Amp ranges. The CSN Series is based on the principles of the Hall effect and the null balance or zero magnetic flux method (feedback system). The magnetic flux in the sensor • Current sensing up to 1200 amps\n• Measures AC, DC and impulse currents\n• Lowest cost/performance ratio\n• Rapid response, no overshoot\n• High overload capacity\n• High level of electrical isolation between primary and secondary circuits\n• Small size and weight ;

DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

GaAs Infrared Light Emitting Diodes

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