丝印代码：CSD87501；CSD87501L 30-V Dual Common Drain N-Channel NexFET™ Power MOSFET

1 Features 1• Low on-resistance • Small footprint of 3.37 mm × 1.47 mm • Ultra-low profile – 0.2-mm high • Lead free • RoHS compliant • Halogen free • Gate ESD protection 2 Applications • Battery management • Battery protection • USB Type-C / PD 3 Description This 30-V, 6.6-mΩ, 3.

CSD87501L 30 V Dual Common Drain N-Channel NexFET Power MOSFET

文件：896.01 Kbytes Page：12 Pages

采用 LGA 封装、具有栅极 ESD 保护的双路共漏极、5.5mΩ、30V、N 沟道 NexFET™ 功率 MOSFET

丝印代码：CSD87501；CSD87501L 30-V Dual Common Drain N-Channel NexFET™ Power MOSFET

1 Features 1• Low on-resistance • Small footprint of 3.37 mm × 1.47 mm • Ultra-low profile – 0.2-mm high • Lead free • RoHS compliant • Halogen free • Gate ESD protection 2 Applications • Battery management • Battery protection • USB Type-C / PD 3 Description This 30-V, 6.6-mΩ, 3.

丝印代码：CSD87501；CSD87501L 30-V Dual Common Drain N-Channel NexFET™ Power MOSFET

1 Features 1• Low on-resistance • Small footprint of 3.37 mm × 1.47 mm • Ultra-low profile – 0.2-mm high • Lead free • RoHS compliant • Halogen free • Gate ESD protection 2 Applications • Battery management • Battery protection • USB Type-C / PD 3 Description This 30-V, 6.6-mΩ, 3.

丝印代码：CSD87501；CSD87501L 30-V Dual Common Drain N-Channel NexFET™ Power MOSFET

1 Features 1• Low on-resistance • Small footprint of 3.37 mm × 1.47 mm • Ultra-low profile – 0.2-mm high • Lead free • RoHS compliant • Halogen free • Gate ESD protection 2 Applications • Battery management • Battery protection • USB Type-C / PD 3 Description This 30-V, 6.6-mΩ, 3.

CSD87501L 30 V Dual Common Drain N-Channel NexFET Power MOSFET

文件：896.01 Kbytes Page：12 Pages

CSD87501L 30 V Dual Common Drain N-Channel NexFET Power MOSFET

文件：896.01 Kbytes Page：12 Pages