型号 功能描述 生产厂家 企业 LOGO 操作
CSD87334Q3D

CSD87334Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • Optimized for High-Duty Cycle • Up to 24 Vin • 96.1% System Efficiency at 12 A • 1.6-W PLoss at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3 mm × 3.3 mm Footprint • Optimized for 5-V Gate Drive •

TI

德州仪器

CSD87334Q3D

CSD87334Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • Optimized for High-Duty Cycle • Up to 24 Vin • 96.1% System Efficiency at 12 A • 1.6-W PLoss at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3 mm × 3.3 mm Footprint • Optimized for 5-V Gate Drive •

TI

德州仪器

CSD87334Q3D

CSD87334Q3D Synchronous Buck NexFET Power Block

文件:1.17278 Mbytes Page:22 Pages

TI

德州仪器

CSD87334Q3D

采用 3mm x 3mm SON 封装的 20A、30V、N 沟道同步降压 NexFET™ 功率 MOSFET 电源块

TI

德州仪器

CSD87334Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • Optimized for High-Duty Cycle • Up to 24 Vin • 96.1% System Efficiency at 12 A • 1.6-W PLoss at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3 mm × 3.3 mm Footprint • Optimized for 5-V Gate Drive •

TI

德州仪器

CSD87334Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • Optimized for High-Duty Cycle • Up to 24 Vin • 96.1% System Efficiency at 12 A • 1.6-W PLoss at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3 mm × 3.3 mm Footprint • Optimized for 5-V Gate Drive •

TI

德州仪器

CSD87334Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • Optimized for High-Duty Cycle • Up to 24 Vin • 96.1% System Efficiency at 12 A • 1.6-W PLoss at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3 mm × 3.3 mm Footprint • Optimized for 5-V Gate Drive •

TI

德州仪器

CSD87334Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • Optimized for High-Duty Cycle • Up to 24 Vin • 96.1% System Efficiency at 12 A • 1.6-W PLoss at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3 mm × 3.3 mm Footprint • Optimized for 5-V Gate Drive •

TI

德州仪器

CSD87334Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • Optimized for High-Duty Cycle • Up to 24 Vin • 96.1% System Efficiency at 12 A • 1.6-W PLoss at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3 mm × 3.3 mm Footprint • Optimized for 5-V Gate Drive •

TI

德州仪器

CSD87334Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • Optimized for High-Duty Cycle • Up to 24 Vin • 96.1% System Efficiency at 12 A • 1.6-W PLoss at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3 mm × 3.3 mm Footprint • Optimized for 5-V Gate Drive •

TI

德州仪器

CSD87334Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • Optimized for High-Duty Cycle • Up to 24 Vin • 96.1% System Efficiency at 12 A • 1.6-W PLoss at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3 mm × 3.3 mm Footprint • Optimized for 5-V Gate Drive •

TI

德州仪器

CSD87334Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • Optimized for High-Duty Cycle • Up to 24 Vin • 96.1% System Efficiency at 12 A • 1.6-W PLoss at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3 mm × 3.3 mm Footprint • Optimized for 5-V Gate Drive •

TI

德州仪器

CSD87334Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • Optimized for High-Duty Cycle • Up to 24 Vin • 96.1% System Efficiency at 12 A • 1.6-W PLoss at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3 mm × 3.3 mm Footprint • Optimized for 5-V Gate Drive •

TI

德州仪器

CSD87334Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • Optimized for High-Duty Cycle • Up to 24 Vin • 96.1% System Efficiency at 12 A • 1.6-W PLoss at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3 mm × 3.3 mm Footprint • Optimized for 5-V Gate Drive •

TI

德州仪器

CSD87334Q3D Synchronous Buck NexFET Power Block

文件:1.17278 Mbytes Page:22 Pages

TI

德州仪器

CSD87334Q3D Synchronous Buck NexFET Power Block

文件:1.17278 Mbytes Page:22 Pages

TI

德州仪器

更新时间:2025-12-27 16:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI/德州仪器
QFN
23+
6000
专业配单原装正品假一罚十
TI/德州仪器
20+
QFN
206
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TI
25+23+
QFN
42404
绝对原装正品全新进口深圳现货
TI/德州仪器
24+
VSON-CLIP-8
9600
原装现货,优势供应,支持实单!
TI(德州仪器)
24+
HVSON-8-EP(3x3)
9555
支持大陆交货,美金交易。原装现货库存。
TI
23+
QFN
5000
全新原装,支持实单,非诚勿扰
TI
2450+
SON-8
8850
只做原装正品假一赔十为客户做到零风险!!
TI/德州仪器
22+
SON-8
2500
原装正品现货假一罚十
TI
三年内
1983
只做原装正品
TI
23+
QFN
3200
公司只做原装,可来电咨询

CSD87334Q3D数据表相关新闻