CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

Synchronous Buck NexFET??Power Block

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Synchronous Buck NexFET??Power Block

文件：1.22852 Mbytes Page：20 Pages

采用 3mm x 3mm SON 封装的 20A、25V、N 沟道同步降压 NexFET™ 功率 MOSFET 电源块

CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

CSD86330Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 15 A • Up to 20 A Operation • High Frequency Operation (Up To 1.5 MHz) • High Density – SON 3.3 mm × 3.3 mm Footprint • Optimized for 5 V Gate Drive • Low Switching Losses • Ultra Low Inductance Package • RoHS Compliant

Synchronous Buck NexFET??Power Block

文件：1.22852 Mbytes Page：20 Pages