位置：首页 > IC中文资料 > CSD23202W10TIC
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：202；CSD23202W10 12-V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi | TI 德州仪器 |   | ||
丝印代码：202；CSD23202W10 12-V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi | TI 德州仪器 | | ||
丝印代码：202；CSD23202W10 12-V P-Channel NexFET™ Power MOSFET 1 Features 1• Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is desi | TI 德州仪器 | | ||
12-V P-Channel NexFET Power MOSFET 文件：440.93 Kbytes Page：12 Pages | TI 德州仪器 | | ||
12-V P-Channel NexFET Power MOSFET 文件：440.93 Kbytes Page：12 Pages | TI 德州仪器 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
1905+ |
DSBGA4 |
27373 |
原装现货 价格优势 |
|||
TI |
24+ |
DSBGA4 |
6800 |
只做自己库存,全新原装进口正品假一赔百,可开13个点增票 |
|||
TI |
三年内 |
1983 |
只做原装正品 |
||||
TI/德州仪器 |
23+ |
DSBGA4 |
24981 |
原装正品代理渠道价格优势 |
|||
TI/德州仪器 |
21+ |
DSBGA-4 |
9990 |
只有原装 |
|||
TI |
2450+ |
SMD |
9485 |
只做原厂原装正品终端客户免费申请样品 |
|||
TI/德州仪器 |
22+ |
DSBGA4 |
6000 |
现货,原厂原装假一罚十! |
|||
TI/德州仪器 |
25+ |
DSBGA4 |
32360 |
TI/德州仪器全新特价CSD23202W10即刻询购立享优惠#长期有货 |
|||
TI |
17+ |
10000 |
原装正品 |
||||
TI |
24+ |
DSBGA-4 |
36500 |
一级代理/放心采购 |
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CSD23202W10TIC规格书下载地址
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DdatasheetPDF页码索引
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