丝印代码：CSD19506KTT；CSD19506KTT 80 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 80-V, 2.0-mΩ, D2PAK (TO-263) Nex

丝印代码：CSD19506KTT；CSD19506KTT 80 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 80-V, 2.0-mΩ, D2PAK (TO-263) Nex

丝印代码：CSD19506KTT；CSD19506KTT 80 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 80-V, 2.0-mΩ, D2PAK (TO-263) Nex

丝印代码：CSD19506KTT；CSD19506KTT 80 V N-Channel NexFET™ Power MOSFET

1 Features 1• Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 80-V, 2.0-mΩ, D2PAK (TO-263) Nex

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 200A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.3mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

采用 D2PAK 封装的单路、2.3mΩ、80V、N 沟道 NexFET™ 功率 MOSFET

80 V N-Channel NexFET Power MOSFET

文件：408.74 Kbytes Page：13 Pages

80 V N-Channel NexFET Power MOSFET

文件：408.74 Kbytes Page：13 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.3mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

丝印代码：CSD19506KCS；CSD19506KCS 80V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 80V, 2.0mΩ, TO-220 NexFET™ power

丝印代码：CSD19506KCS；CSD19506KCS 80V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 80V, 2.0mΩ, TO-220 NexFET™ power

80V N-Channel NexFET Power MOSFETs

文件：476.87 Kbytes Page：10 Pages

Portable Cordage, 2 C #18 Str BC, PVC Ins, PVC Jkt, UL Type SJTOW

Product Description Portable Cordage, 2 Conductor 18AWG (42x34) Bare Copper, PVC Insulation, PVC Outer Jacket, UL Type SJTOW