丝印代码：CSD19506KCS；CSD19506KCS 80V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 80V, 2.0mΩ, TO-220 NexFET™ power

丝印代码：CSD19506KCS；CSD19506KCS 80V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb-free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 80V, 2.0mΩ, TO-220 NexFET™ power

采用 TO-220 封装的单路、2.3mΩ、80V、N 沟道 NexFET™ 功率 MOSFET

这款 80V，2.0mΩ，TO-220 NexFET 功率 MOSFET 被设计成在功率转换应用中最大限度地降低损耗。 • 超低 Qg 和 Qgd\n• 低热阻\n• 雪崩额定值\n• 无铅引脚镀层\n• 符合 RoHS 环保标准\n• 无卤素\n• 晶体管 (TO)-220 塑料封装;

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.3mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

80V N-Channel NexFET Power MOSFETs

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Dual-Channel, 8-Bit, 100Msps ADC

文件：1.03102 Mbytes Page：34 Pages

Dual-Channel, 8-Bit, 100Msps ADC

文件：1.03102 Mbytes Page：34 Pages