丝印代码：CSD19503KCS；CSD19503KCS 80V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 80V, 7.6mΩ, TO-220 NexFET™ power

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.2mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

丝印代码：CSD19503KCS；CSD19503KCS 80V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 80V, 7.6mΩ, TO-220 NexFET™ power

80 V N-Channel NexFET Power MOSFETs

文件：768.68 Kbytes Page：10 Pages

80 V N-Channel NexFET??Power MOSFETs

文件：764.79 Kbytes Page：10 Pages