丝印代码：CSD19503KCS；CSD19503KCS 80V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 80V, 7.6mΩ, TO-220 NexFET™ power

丝印代码：CSD19503KCS；CSD19503KCS 80V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 80V, 7.6mΩ, TO-220 NexFET™ power

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.2mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

采用 TO-220 封装的单路、9.2mΩ、80V、N 沟道 NexFET™ 功率 MOSFET

这款 80V，7.6mΩ，TO-220 NexFET 功率 MOSFET 被设计成在功率转换应用中最大限度地降低功率损耗。 要了解所有可用封装，请见数据表末尾的可订购产品附录。 最大 RθJC = 0.8°C/W，脉冲持续时间 ≤ 100µs，占空比 ≤ 1% • 超低 Qg 和 Qgd\n• 低热阻\n• 雪崩级\n• 无铅端子镀层\n• 符合 RoHS 标准\n• 无卤素\n• 晶体管 (TO)-220 塑料封装;

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