位置：首页 > IC中文资料 > CSD18535KTT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CSD18535KTT | 丝印代码：CSD18535KTT；CSD18535KTT 60 V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 60-V, 1.6-mΩ, D2PAK (TO-263) NexF | TI 德州仪器 |   | |
丝印代码：CSD18535KTT；CSD18535KTT 60 V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 60-V, 1.6-mΩ, D2PAK (TO-263) NexF | TI 德州仪器 | | ||
丝印代码：CSD18535KTT；CSD18535KTT 60 V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 60-V, 1.6-mΩ, D2PAK (TO-263) NexF | TI 德州仪器 | | ||
丝印代码：CSD18535KTT；CSD18535KTT 60 V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 60-V, 1.6-mΩ, D2PAK (TO-263) NexF | TI 德州仪器 | | ||
CSD18535KTT | isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 200A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | |
CSD18535KTT | 采用 D2PAK 封装的单路、2mΩ、60V、N 沟道 NexFET™ 功率 MOSFET | TI 德州仪器 | | |
CSD18535KTT | 60 V N-Channel NexFET Power MOSFET 文件：417.82 Kbytes Page：13 Pages | TI 德州仪器 | | |
60 V N-Channel NexFET Power MOSFET 文件：417.82 Kbytes Page：13 Pages | TI 德州仪器 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 200A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
丝印代码：CSD18535KCS；CSD18535KCS 60V N-Channel NexFET™ Power MOSFET 1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb-Free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 60V, 1.6mΩ, TO-220 NexFET™ power | TI 德州仪器 | | ||
丝印代码：CSD18535KCS；CSD18535KCS 60V N-Channel NexFET™ Power MOSFET 1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb-Free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 60V, 1.6mΩ, TO-220 NexFET™ power | TI 德州仪器 | | ||
CSD18535KCS 60 V N-Channel NexFET Power MOSFET 文件：338.7 Kbytes Page：11 Pages | TI 德州仪器 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
22+ |
5000 |
只做原装鄙视假货15118075546 |
||||
TI |
25+ |
DDPAK/TO-263 (KTT) |
6000 |
原厂原装,价格优势 |
|||
TI(德州仪器) |
2450+ |
SMD |
9850 |
只做原装正品代理渠道!假一赔三! |
|||
TI |
23+ |
TO-263-3 |
20000 |
||||
TI(德州仪器) |
26+ |
N/A |
360000 |
只有原装 可配单 |
|||
TI |
23+ |
TO263 |
5000 |
全新原装,支持实单,非诚勿扰 |
|||
TI/德州仪器 |
2216+ |
TO-263-3 |
8000 |
原装正品假一罚十 |
|||
TI |
三年内 |
1983 |
只做原装正品 |
||||
TI |
16+ |
TO-263 |
10000 |
原装正品 |
|||
TI(德州仪器) |
25+ |
N/A |
8800 |
公司只做原装,详情请咨询 |
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DdatasheetPDF页码索引
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