位置：首页 > IC中文资料 > CSD18535KTT
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CSD18535KTT | CSD18535KTT 60 V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 60-V, 1.6-mΩ, D2PAK (TO-263) NexF | TI 德州仪器 |   | |
CSD18535KTT | isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 200A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | |
CSD18535KTT | 采用 D2PAK 封装的单路、2mΩ、60V、N 沟道 NexFET™ 功率 MOSFET | TI 德州仪器 | | |
CSD18535KTT | 60 V N-Channel NexFET Power MOSFET 文件：417.82 Kbytes Page：13 Pages | TI 德州仪器 | | |
CSD18535KTT 60 V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 60-V, 1.6-mΩ, D2PAK (TO-263) NexF | TI 德州仪器 | | ||
CSD18535KTT 60 V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 60-V, 1.6-mΩ, D2PAK (TO-263) NexF | TI 德州仪器 | | ||
CSD18535KTT 60 V N-Channel NexFET™ Power MOSFET 1 Features 1• Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 60-V, 1.6-mΩ, D2PAK (TO-263) NexF | TI 德州仪器 | | ||
60 V N-Channel NexFET Power MOSFET 文件：417.82 Kbytes Page：13 Pages | TI 德州仪器 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 200A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
CSD18535KCS 60V N-Channel NexFET™ Power MOSFET 1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb-Free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 60V, 1.6mΩ, TO-220 NexFET™ power | TI 德州仪器 | | ||
CSD18535KCS 60V N-Channel NexFET™ Power MOSFET 1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Pb-Free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • Secondary side synchronous rectifier • Motor control 3 Description This 60V, 1.6mΩ, TO-220 NexFET™ power | TI 德州仪器 | | ||
CSD18535KCS 60 V N-Channel NexFET Power MOSFET 文件：338.7 Kbytes Page：11 Pages | TI 德州仪器 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI(德州仪器) |
24+ |
TO-263-3 |
36242 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
TI |
三年内 |
1983 |
只做原装正品 |
||||
TI |
25+ |
TO263-3 |
352 |
原装正品,假一罚十! |
|||
TI(德州仪器) |
2450+ |
SMD |
9850 |
只做原装正品代理渠道!假一赔三! |
|||
TI |
24+ |
DDPAK/TO-263|3 |
70230 |
免费送样原盒原包现货一手渠道联系 |
|||
TI/德州仪器 |
2216+ |
TO-263-3 |
8000 |
原装正品假一罚十 |
|||
TI |
20+ |
TO-263 |
53650 |
TI原装主营-可开原型号增税票 |
|||
TI |
24+ |
TO-263 |
16500 |
只做原装正品现货 假一赔十 |
|||
TI/德州 |
24+ |
TO-263 |
5000 |
全新原装正品,现货销售 |
|||
TI/德州 |
23+ |
TO-263 |
20000 |
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DdatasheetPDF页码索引
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