isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

CSD18534KCS 60V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Logic level • Pb-Free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • DC-DC conversion • Secondary side synchronous rectifier • Motor control 3 Description Th

60-V, N-Channel NexFET Power MOSFETs

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N-Channel 60 V (D-S) MOSFET

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采用 TO-220 封装的单路、9.5mΩ、60V、N 沟道 NexFET™ 功率 MOSFET

CSD18534KCS 60V N-Channel NexFET™ Power MOSFET

1 Features • Ultra-low Qg and Qgd • Low thermal resistance • Avalanche rated • Logic level • Pb-Free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • DC-DC conversion • Secondary side synchronous rectifier • Motor control 3 Description Th