Contact Form: 1a Load Voltage: 60V Maximum

CotoMOS CT137/CS137 The CT137 and CS137 combine Coto quality and economy in an industry standard 6 pin DIP package. Both the CT137 and the CS137 offer low on resistance. The CT137 utilizes a thru hole lead configuration, while the CS137 offers a surface mount option when the application requires

CotoMOS® CT137/CS137

The CT137 and CS137 combine Coto quality and economy in an industry standard 6 pin DIP package. Both the CT137 and the CS137 offer low on resistance. The CT137 utilizes a thru hole lead configuration, while the CS137 offers a surface mount option when the application requires it. Both relays are ide • Contact Form: 1A\n• Load Voltage: 60V Maximum\n• Operation LED Current: 3.0mA Maximum\n• Load Current: 400mA Maximum\n• On-Resistance: 1.6Ω Maximum\n• Low Off-State Leakage Current: 1.0μA Maximum\n• I/O Breakdown Voltage: 1500Vrms Minimum\n• Suffix - H for I/O Breakdown Voltage: 5000Vrms Minimum;

MAXIMUM RATINGS, ELECTRICAL SPECIFICATIONS

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封装/外壳：6-SMD（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SSR RELAY SPST-NO 400MA 0-60V 继电器 固态继电器

封装/外壳：6-SMD（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SSR RELAY SPST-NO 400MA 0-60V 继电器 固态继电器

Universal road lighting (IESNA Type II medium) beam

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光电附件

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are complementary with BD 136, 138, 140

N-CHANNEL MOS BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency — 60 (Typical) •

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the