Single Phase Bridge Rectifiers CP80 Series

Features: • High surge current capability • PCB mounted / screw fixing • Surge overload rating: 200 A peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Reliable low cost construction utilizing moulded plastic technique

SINGLE-PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A)

VOLTAGE - 50 to 800 Volts CURRENT - P.C. MTG 3A, HEAT-SINK MTG 8A FEATURES • Surge overload rating—200 Amperes peak • Low forward voltage drop and reverse leakage • Small size, simple installation • Plastic package has Underwriter Laboratory Flammability Classification 94V-O

SINGLE-PHASE SILICON BRIDGE

FEATURES ● Surge overload rating—200 Amperes peak ● Low forward voltage drop and reverse leakage ● Small size, simple installation ● Plastic package has Underwriter Laboratory Flammability Classification 94V-O ● Reliable low cost construction utilizing molded plastic technique

Single Phase Bridge Rectifiers

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P-Channel MOSFET Die Enhancement-Mode

APPLICATIONS: • Load switching • Power management • DC-DC conversion FEATURES: • Low on-resistance, rDS(ON) • Low gate charge, Qgs • High drain current density

P-Channel MOSFET Die Enhancement-Mode

APPLICATIONS: • Load switching • Power management • DC-DC conversion FEATURES: • Low on-resistance, rDS(ON) • Low gate charge, Qgs • High drain current density

P-Channel MOSFET Die Enhancement-Mode

APPLICATIONS: • Load switching • Power management • DC-DC conversion FEATURES: • Low on-resistance, rDS(ON) • Low gate charge, Qgs • High drain current density

P-Channel MOSFET Die Enhancement-Mode

APPLICATIONS: • Load switching • Power management • DC-DC conversion FEATURES: • Low on-resistance, rDS(ON) • Low gate charge, Qgs • High drain current density

Chip Form: 83.500 X 57.100 P-Chan Enhancement Mode MOSFET

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat