Power Transistor PNP - Darlington Chip

PROCESS DETAILS Process EPITAXIAL BASE Die Size 111 X 111 MILS Die Thickness 10 MILS Base Bonding Pad Area 20 X 30 MILS Emitter Bonding Pad Area 20 X 26 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au/Cr/Ni/Au - 6,000Å

包装：散装 描述：FLEXWIRE CABLE-10/ SM 电缆，电线 多芯导线

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

Chip Form: Darlington Power Transistor

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

Chip Form: Darlington Power Transistor

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

Chip Form: Darlington Power Transistor

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

Darlington Transistors(NPN Silicon)

Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available*

NPN Darlington transistor

DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. PNP complement: BC516. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • Very high DC current gain (min. 30000). APPLICATIONS • Where very high amplification is required.

IP Library: Wide Range ESR Capacitor, Low Noise, 100mA Low Dropout Voltage Regulator

IP Library: Wide Range ESR Capacitor, Low Noise, 100mA Low Dropout Voltage Regulator ■ AnyESR REGULATOR ■ VERY COMMON OUTPUT DECOUPLING CERAMIC CAPACITOR ■ LOW CONSUMPTION : 250µA FULL LOAD ■ VERY LOW NOISE : 30µV ■ VERY LOW DROPOUT VOLTAGE : 50mV ■ HIGH PSRR : 60dB ■ STANDBY AND POWER DOWN

Silicon High Voltage Plastic Rectifier for Industrial and Microwave Oven

Features: ● Controlled Avalanche Characteristic Combined with the Ability to Dissipate Reverse Power ● Low Forward Voltage Drop ● Typical IR less than 0.1µA ● High Overload Surge Capacity

N-CHANNEL POWER MOS TRANSISTORS

HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.