型号 功能描述 生产厂家 企业 LOGO 操作
CP245

Power Transistor NPN, 8.0A Power Transistor Chip

PROCESS DETAILS Process MULTIEPITAXIAL MESA Die Size 120 x 145 MILS Die Thickness 13 MILS Base Bonding Pad Area 20 x 45 MILS Emitter Bonding Pad Area 14 x 70 MILS Top Side Metalization Al - 50,000Å Back Side Metalization Cr / Ni / Ag - 10,000Å

CENTRAL

Surface mount coupler with a small size of 1.6 X 0.8 X 0.6 mm, RoHS compliant.

文件:184.81 Kbytes Page:3 Pages

FRONTIER

NPN - Power Transistor Die 8.0 Amp, 120 Volt

文件:868.07 Kbytes Page:6 Pages

CENTRAL

NPN - Power Transistor Die 8.0 Amp, 150 Volt

文件:868.05 Kbytes Page:6 Pages

CENTRAL

5e Coupler Patch Panel Component Labels for Category 5e Coupler Patch Panel

文件:75.54 Kbytes Page:2 Pages

PANDUIT

包装:散装 描述:COUPLER PATCH PANEL, CAT 5E, FLA 连接器,互连器件 Keystone 面板、框架

PANDUIT

连接器外壳

PANDUIT

Chip Form: 8A Power Transistor

CENTRAL

NPN - Power Transistor Die 8.0 Amp, 120 Volt

文件:868.07 Kbytes Page:6 Pages

CENTRAL

NPN - Power Transistor Die 8.0 Amp, 120 Volt

文件:868.07 Kbytes Page:6 Pages

CENTRAL

NPN - Power Transistor Die 8.0 Amp, 150 Volt

文件:868.05 Kbytes Page:6 Pages

CENTRAL

NPN - Power Transistor Die 8.0 Amp, 150 Volt

文件:868.05 Kbytes Page:6 Pages

CENTRAL

Chip Form: 8A Power Transistor

CENTRAL

NPN - Power Transistor Die 8.0 Amp, 120 Volt

文件:868.07 Kbytes Page:6 Pages

CENTRAL

NPN - Power Transistor Die 8.0 Amp, 150 Volt

文件:868.05 Kbytes Page:6 Pages

CENTRAL

NPN - Power Transistor Die 8.0 Amp, 120 Volt

文件:868.07 Kbytes Page:6 Pages

CENTRAL

NPN - Power Transistor Die 8.0 Amp, 150 Volt

文件:868.05 Kbytes Page:6 Pages

CENTRAL

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

POINN

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

NTE

N-channel silicon field-effect transistors

文件:97.4 Kbytes Page:11 Pages

PHILIPS

飞利浦

N-channel silicon field-effect transistors

文件:97.4 Kbytes Page:11 Pages

PHILIPS

飞利浦

VHF power MOS transistor

文件:91.6 Kbytes Page:12 Pages

PHILIPS

飞利浦

CP245产品属性

  • 类型

    描述

  • 型号

    CP245

  • 制造商

    CENTRAL

  • 制造商全称

    Central Semiconductor Corp

  • 功能描述

    Power Transistor NPN, 8.0A Power Transistor Chip

更新时间:2026-3-15 19:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CHIPHOM
24+
QFN
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
Silicon Labs
18500
全新原厂原装现货!受权代理!可送样可提供技术支持!
LUCNT
24+
121
PROTEK/普罗太克
24+
SOT23-6
9600
原装现货,优势供应,支持实单!
SILICON
24+
QFN32
4000
刚到全新原装现货特价热卖
CECPS
21+
NA
1062
只做原装正品,不止网上数量,欢迎电话微信查询!
SILICON
1106+
QFN
27
一级代理,专注军工、汽车、医疗、工业、新能源、电力
替代型号
24+
QFN16TSSOP16
3500
原装现货,可开13%税票
Silicon Labs
两年内
NA
1500
实单价格可谈
PROTEK/普罗太克
23+
SOT23-6
50000
原装正品 支持实单

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