Small Signal Transistor NPN - RF Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.7 x 21.7 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.4 MILS DIAMETER Emitter Bonding Pad Area 3.4 x 3.4 MILS Top Side Metalization Al - 10,000Å Back Side Metalization Au - 12,000Å

Electronics record tracking systems

文件：448.82 Kbytes Page：3 Pages

Chip Form: RF Transistor

NPN - RF Transistor Die 0.4 Amp, 30 Volt

文件：665.86 Kbytes Page：9 Pages

NPN - RF Transistor Die 0.4 Amp, 30 Volt

文件：631.67 Kbytes Page：9 Pages

NPN - RF Transistor Die 0.4 Amp, 20 Volt

文件：585.47 Kbytes Page：8 Pages

NPN - RF Transistor Die 0.4 Amp, 30 Volt

文件：665.86 Kbytes Page：9 Pages

PNP - RF Transistor Die 0.4 Amp, 40 Volt

文件：624.25 Kbytes Page：8 Pages

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

Complementary Silicon Plastic Power Transistors

6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage —

Complementary Silicon Plastic Power Transistors

6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage —

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS