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CP191价格

参考价格：￥88.4551

型号：CP191V-2N2222A-CT20 品牌：Central Semiconductor Co 备注：这里有CP191多少钱，2026年最近7天走势，今日出价，今日竞价，CP191批发/采购报价，CP191行情走势销售排行榜，CP191报价。

型号	功能描述	生产厂家企业	LOGO
CP191	Small Signal Transistor NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16.5 x 16.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å	CENTRAL	CENTRAL
CP191	Small Signal Transistor NPN - Amp/Switch Transistor Chip	CENTRAL	CENTRAL
CP191V	Small Signal Transistor NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16.5 x 16.5 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å	CENTRAL	CENTRAL
CP191V-2N2222A	NPN - Small Signal Transistor Die NPN - Small Signal Transistor Die The CP191V-2N2222A is a silicon NPN small signal transistor designed for general purpose switching applications. MECHANICAL SPECIFICATIONS: Die Size 16.5 x 16.5 MILS Die Thickness 7.1 MILS Base Bonding Pad Size 3.5 x 4.3 MILS Emitter Bonding Pad	CENTRAL	CENTRAL
CP191_06	Small Signal Transistor NPN - Amp/Switch Transistor Chip 文件：225.8 Kbytes Page：2 Pages	CENTRAL	CENTRAL
CP191-2N2219A-CT	P-Channel JFET Die 文件：465.81 Kbytes Page：9 Pages	CENTRAL	CENTRAL
CP191-2N2219A-CT	PNP - High Voltage Transistor Die 文件：530.8 Kbytes Page：9 Pages	CENTRAL	CENTRAL
CP191-2N2222A	Chip Form: Amplifier/Switch Transistor	CENTRAL	CENTRAL
CP191-2N2222A-CT	P-Channel JFET Die 文件：465.81 Kbytes Page：9 Pages	CENTRAL	CENTRAL
CP191-2N2222A-CT	PNP - High Voltage Transistor Die 文件：530.8 Kbytes Page：9 Pages	CENTRAL	CENTRAL
CP191-2N2222A-WN	P-Channel JFET Die 文件：465.81 Kbytes Page：9 Pages	CENTRAL	CENTRAL
CP191-2N2222A-WN	PNP - High Voltage Transistor Die 文件：530.8 Kbytes Page：9 Pages	CENTRAL	CENTRAL
CP191-2N2222A-WR	P-Channel JFET Die 文件：465.81 Kbytes Page：9 Pages	CENTRAL	CENTRAL
CP191-2N2222A-WR	PNP - High Voltage Transistor Die 文件：530.8 Kbytes Page：9 Pages	CENTRAL	CENTRAL
CP191-2N2222A-WS	PNP - High Voltage Transistor Die 文件：530.8 Kbytes Page：9 Pages	CENTRAL	CENTRAL
CP191-2N2222A-WS	P-Channel JFET Die 文件：465.81 Kbytes Page：9 Pages	CENTRAL	CENTRAL
CP1919S	电机驱动芯片	Chipsky	Chipsky
CP191V-2N2222A-CT	封装/外壳：模具包装：散装描述：TRANS NPN 40V 0.8A DIE 1=400 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	CENTRAL	CENTRAL
CP191V-2N2222A-CT	P-Channel JFET Die 文件：465.81 Kbytes Page：9 Pages	CENTRAL	CENTRAL
CP191V-2N2222A-CT	PNP - High Voltage Transistor Die 文件：530.8 Kbytes Page：9 Pages	CENTRAL	CENTRAL
CP191V-2N2222A-CT20	封装/外壳：模具包装：散装描述：TRANS NPN 40V 0.8A DIE 1=20PCS 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	CENTRAL	CENTRAL
CP191V-2N2222A-WN	P-Channel JFET Die 文件：465.81 Kbytes Page：9 Pages	CENTRAL	CENTRAL
CP191V-2N2222A-WN	PNP - High Voltage Transistor Die 文件：530.8 Kbytes Page：9 Pages	CENTRAL	CENTRAL
CP191V-2N2222A-WR	PNP - High Voltage Transistor Die 文件：530.8 Kbytes Page：9 Pages	CENTRAL	CENTRAL
CP191V-2N2222A-WR	P-Channel JFET Die 文件：465.81 Kbytes Page：9 Pages	CENTRAL	CENTRAL
BCR191	PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ)	SIEMENS 西门子	SIEMENS
BCR191S	PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built in bias resistor (R1=22kΩ, R2=22kΩ)	SIEMENS 西门子	SIEMENS
BCR191W	PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ)	SIEMENS 西门子	SIEMENS
NTE191	Silicon Complementary Transistors High Voltage Video Amplifier Description: The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high–voltage video and luminance output stages in TV receivers. Features: • High Collector–Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA • Low Coll	NTE	NTE
SMTPB191	TRISILTM DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

CP191产品属性

类型
描述
Case：
Chip_Packaging
Configuration/ Description：
Bare die 16.535 X 16.535
Polarity：
NPN
IC MAX：
800mA
PD MAX：
800mW
VCEO MAX：
40V
hFE MIN：
100
hFE MAX：
300
@VCE：
10V
VCE(SAT) MAX：
300mV
@IC：
150mA
@IB：
15mA
Cob MAX：
8pF
fT MIN：
300MHz
NF MAX：
4dB

CP191供应商更多...

更新时间：2021-9-14 10:50:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科雨电子有限公司	CP191V-2N2222A-CT20	CENTRAL	25+	模具	26	就找我吧!--邀您体验愉快问购元件!	询价

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找IC，尽在114IC

CP191价格

CP191产品属性

CP191供应商更多...

CP191芯片相关品牌

CP191规格书下载地址

CP191参数引脚图相关

CP191数据表相关新闻

CP0080SBC

CP1W-CIF11

CP147660-195

CP04V3T1R50 TA-I(大毅) 贴片保险丝

CP2102

CP2102-GMR

DdatasheetPDF页码索引