Small Signal Transistor NPN - Amp/Switch Transistor Chip

PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16.5 x 16.5 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å

NPN - Small Signal Transistor Die

NPN - Small Signal Transistor Die The CP191V-2N2222A is a silicon NPN small signal transistor designed for general purpose switching applications. MECHANICAL SPECIFICATIONS: Die Size 16.5 x 16.5 MILS Die Thickness 7.1 MILS Base Bonding Pad Size 3.5 x 4.3 MILS Emitter Bonding Pad

Chip Form: Amplifier/Switch Transistor

Chip Form: Amplifier/Switch Transistor

封装/外壳：模具 包装：散装 描述：TRANS NPN 40V 0.8A DIE 1=400 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

P-Channel JFET Die

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PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

封装/外壳：模具 包装：散装 描述：TRANS NPN 40V 0.8A DIE 1=20PCS 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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文件：465.81 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

PNP - High Voltage Transistor Die

文件：530.8 Kbytes Page：9 Pages

P-Channel JFET Die

文件：465.81 Kbytes Page：9 Pages

Logic Controlled, High-Side Power Switches

GENERAL DESCRIPTION The ADP190/ADP191 are high-side load switches designed for operation from 1.1 V to 3.6 V. These load switchs provide power domain isolation for extended power battery life. The devices contain a low on-resistance P-channel MOSFET that supports more than 500 mA of continuous cu

MINIATURE FUSES - 5x20 mm

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Assembly and Handling Guidelines

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15-115 Watts LINEARS

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3M Scotch-WeldTM Structural Adhesive Film

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