BCR191晶体管资料
BCR191别名：BCR191三极管、BCR191晶体管、BCR191晶体三极管
BCR191生产厂家：
BCR191制作材料：Si-P+R
BCR191性质：差分放大器射极输出 （Dual）
BCR191封装形式：贴片封装
BCR191极限工作电压：50V
BCR191最大电流允许值：0.1A
BCR191最大工作频率：<1MHZ或未知
BCR191引脚数：3
BCR191最大耗散功率：
BCR191放大倍数：
BCR191图片代号：H-15
BCR191vtest：50
BCR191htest：999900
- BCR191atest：0.1
BCR191wtest：0
BCR191代换 BCR191用什么型号代替：DTA124EK,KSR2103,RN2403,UN2112,
BCR191价格
参考价格：￥0.1150
型号：BCR191E6327 品牌：INF 备注：这里有BCR191多少钱，2026年最近7天走势，今日出价，今日竞价，BCR191批发/采购报价，BCR191行情走势销售排行榜，BCR191报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BCR191 | PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 22kΩ , R2 = 22kΩ ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 |   | |
BCR191 | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ) | SIEMENS 西门子 | | |
BCR191 | AF 数字晶体管 PNP硅数字晶体管 • 开关电路、逆变器、接口电路、驱动电路\n• 无铅（符合 RoHS 标准）封装\n• 符合 AEC Q101 标准; | INFINEON 英飞凌 | | |
BCR191 | 数字晶体管 | FOSHAN 蓝箭电子 | | |
BCR191 | 丝印代码：WOs；PNP Silicon Digital Transistor 文件：841.89 Kbytes Page：8 Pages | INFINEON 英飞凌 | | |
BCR191 | PNP Silicon Digital Transistor 文件：181.49 Kbytes Page：10 Pages | INFINEON 英飞凌 | | |
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 22kΩ , R2 = 22kΩ ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 22kΩ , R2 = 22kΩ ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
丝印代码：WOs；PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 22kΩ , R2 = 22kΩ ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built in bias resistor (R1=22kΩ, R2=22kΩ) | SIEMENS 西门子 | | ||
丝印代码：WOs；PNP Silicon Digital Transistor Array PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 22kΩ , R2 = 22kΩ ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 22kΩ , R2 = 22kΩ ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 22kΩ , R2 = 22kΩ ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ) | SIEMENS 西门子 | | ||
PNP Silicon Digital Transistor 文件：181.49 Kbytes Page：10 Pages | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor 文件：841.89 Kbytes Page：8 Pages | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor 文件：181.49 Kbytes Page：10 Pages | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor 文件：181.49 Kbytes Page：10 Pages | INFINEON 英飞凌 | | ||
丝印代码：WOs；PNP Silicon Digital Transistor 文件：841.89 Kbytes Page：8 Pages | INFINEON 英飞凌 | | ||
Digital Transistor | INFINEON 英飞凌 | | ||
封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：TRANS PREBIAS PNP 250MW SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | INFINEON 英飞凌 | | ||
封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：TRANS PREBIAS PNP 250MW SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | INFINEON 英飞凌 | | ||
Silicon Complementary Transistors High Voltage Video Amplifier Description: The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high–voltage video and luminance output stages in TV receivers. Features: • High Collector–Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA • Low Coll | NTE | | ||
TRISILTM DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE | STMICROELECTRONICS 意法半导体 | |
BCR191产品属性
- 类型
描述
- hFEmin：
50
- ICBOmax：
100 nA
- Ptotmax：
200 mW
- R1 / R2：
1
- R1：
22 kΩ
- R2：
22 kΩ
- VCBOmax：
50 V
- VCE(sat)max：
0.5 V
- VCEOmax：
50 V
- VEBOmax：
10 V
- Vi (off) max：
1.5 100µA / 5V
- Vi (on)max：
1.5 V
- Vi (on)min：
1 2mA / 0.3V
- Mounting：
SMT
- Polarity：
PNP (Single)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
SOT23 |
32360 |
INFINEON/英飞凌全新特价BCR191E6327即刻询购立享优惠#长期有货 |
|||
INFINEON/英飞凌 |
2025+ |
SOT323 |
5000 |
原装进口价格优 请找坤融电子! |
|||
INFINEON |
16+ |
SOT323 |
12000 |
进口原装现货/价格优势! |
|||
Infineon(英飞凌) |
24+ |
SOT-323-3 |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
Infineon(英飞凌) |
25+ |
- |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
Infineon |
19+ |
TSFP-3 |
36014 |
||||
INFINEON/英飞凌 |
2009+PB |
SOT-323 |
3000 |
原装正品 可含税交易 |
BCR191规格书下载地址
BCR191参数引脚图相关
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DdatasheetPDF页码索引
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