Phototransistor Optocouplers

Description The CNY17, CNY17F and MOC810X devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. Features ■ CNY171/2/3/4 and CNY17F1/2/3/4 are also available in white package by specifying M suffix (eg. CNY17F2M) ■ UL recognized (File #

Phototransistor Optocouplers

Description The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. Features ■ UL recognized (File # E90700, Vol. 2) ■ VDE recognized – Add option V (e.g., CNY17F2VM) – File #102497 ■ Current transf

Phototransistor Optocouplers

Description The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. Features ■ UL recognized (File # E90700, Vol. 2) ■ VDE recognized – Add option V (e.g., CNY17F2VM) – File #102497 ■ Current transf

6-Pin DIP High BV CEO Phototransistor Optocouplers

Features ■ High BV CEO : 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M) ■ Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation ■ Current Transfer Ratio In Select Groups ■ Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptabil

6 引脚 DIP 高 BVCEO 光电晶体管输出光耦合器

CNY17XM、CNY17FXM 和 MOC810XM 器件包含砷化镓红外发光二极管，与双列直插封装中的 NPN 光电晶体管耦合。 • 高 BVCEO： 最小 70 V（CNY17XM、CNY17FXM、MOC8106M）\n• 严格匹配的电流传输比(CTR)\n• 最大程度地减少单元间的差异\n• 选择组中的电流传输比\n• 耦合电容非常低，且没有芯片到引脚 6 的基极连接，实现最低的噪声易感性（CNY17FXM、MOC8106M）\n• 安全和法规认证：\n• UL1577，4170 VACRMS（1 分钟）\n• DIN-EN/IEC60747-5-5，850 V 峰值工作绝缘电压;

Phototransistor Optocouplers

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GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 12 mW (typ.) ● Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) ● Good optical power output linearity with respect to input current ● Wide d

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE