CNY171S价格

参考价格:¥1.0551

型号:CNY171SM 品牌:Fairchild 备注:这里有CNY171S多少钱,2025年最近7天走势,今日出价,今日竞价,CNY171S批发/采购报价,CNY171S行情走势销售排行榜,CNY171S报价。
型号 功能描述 生产厂家 企业 LOGO 操作
CNY171S

Phototransistor Optocouplers

Description The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Features ■ CNY17-1/2/3 are also available in white package by specifying -M suffix (eg. CNY17-2-M) ■ UL recognized (File # E90700) ■ VDE recognized – 102497 for white package – Ad

Fairchild

仙童半导体

Phototransistor Optocouplers

Description The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Features ■ CNY17-1/2/3 are also available in white package by specifying -M suffix (eg. CNY17-2-M) ■ UL recognized (File # E90700) ■ VDE recognized – 102497 for white package – Ad

Fairchild

仙童半导体

Phototransistor Optocouplers

Description The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Features ■ CNY17-1/2/3 are also available in white package by specifying -M suffix (eg. CNY17-2-M) ■ UL recognized (File # E90700) ■ VDE recognized – 102497 for white package – Ad

Fairchild

仙童半导体

Phototransistor Optocouplers

Description The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. Features ■ UL recognized (File # E90700, Vol. 2) ■ VDE recognized – Add option V (e.g., CNY17F2VM) – File #102497 ■ Current transf

Fairchild

仙童半导体

6-Pin DIP High BVCEO Phototransistor Optocouplers

Description The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in−line package. Features  High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)  Closely Matched Current Transfer Ratio (CTR) Min

ONSEMI

安森美半导体

6-Pin DIP High BV CEO Phototransistor Optocouplers

Features ■ High BV CEO : 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M) ■ Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation ■ Current Transfer Ratio In Select Groups ■ Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptabil

ONSEMI

安森美半导体

6-Pin DIP High BV CEO Phototransistor Optocouplers

Features ■ High BV CEO : 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M) ■ Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation ■ Current Transfer Ratio In Select Groups ■ Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptabil

ONSEMI

安森美半导体

6-Pin DIP High BVCEO Phototransistor Optocouplers

Description The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in−line package. Features  High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)  Closely Matched Current Transfer Ratio (CTR) Min

ONSEMI

安森美半导体

Phototransistor Optocouplers

Description The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Features ■ CNY17-1/2/3 are also available in white package by specifying -M suffix (eg. CNY17-2-M) ■ UL recognized (File # E90700) ■ VDE recognized – 102497 for white package – Ad

Fairchild

仙童半导体

Phototransistor Optocouplers

Description The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. Features ■ UL recognized (File # E90700, Vol. 2) ■ VDE recognized – Add option V (e.g., CNY17F2VM) – File #102497 ■ Current transf

Fairchild

仙童半导体

Phototransistor Optocouplers

Description The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Features ■ CNY17-1/2/3 are also available in white package by specifying -M suffix (eg. CNY17-2-M) ■ UL recognized (File # E90700) ■ VDE recognized – 102497 for white package – Ad

Fairchild

仙童半导体

6-Pin DIP High BVCEO Phototransistor Optocouplers

Description The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in−line package. Features  High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)  Closely Matched Current Transfer Ratio (CTR) Min

ONSEMI

安森美半导体

Phototransistor Optocouplers

Description The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. Features ■ UL recognized (File # E90700, Vol. 2) ■ VDE recognized – Add option V (e.g., CNY17F2VM) – File #102497 ■ Current transf

Fairchild

仙童半导体

6-Pin DIP High BV CEO Phototransistor Optocouplers

Features ■ High BV CEO : 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M) ■ Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation ■ Current Transfer Ratio In Select Groups ■ Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptabil

ONSEMI

安森美半导体

Phototransistor Optocouplers

Description The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. Features ■ UL recognized (File # E90700, Vol. 2) ■ VDE recognized – Add option V (e.g., CNY17F2VM) – File #102497 ■ Current transf

Fairchild

仙童半导体

6-Pin DIP High BVCEO Phototransistor Optocouplers

Description The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in−line package. Features  High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)  Closely Matched Current Transfer Ratio (CTR) Min

ONSEMI

安森美半导体

6-Pin DIP High BV CEO Phototransistor Optocouplers

Features ■ High BV CEO : 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M) ■ Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation ■ Current Transfer Ratio In Select Groups ■ Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptabil

ONSEMI

安森美半导体

Phototransistor Optocouplers

Description The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Features ■ CNY17-1/2/3 are also available in white package by specifying -M suffix (eg. CNY17-2-M) ■ UL recognized (File # E90700) ■ VDE recognized – 102497 for white package – Ad

Fairchild

仙童半导体

晶体管输出光电耦合器 Optocoupler Hi Bvceo Phototransistor

ONSEMI

安森美半导体

晶体管输出光电耦合器 Optocoupler Hi Bvceo Phototransistor

ONSEMI

安森美半导体

晶体管输出光电耦合器 Optocoupler Hi Bvceo Phototransistor

ONSEMI

安森美半导体

Radial Box Metallized Polypropylene Capacitors

文件:190.05 Kbytes Page:3 Pages

CDE

RUGGED & LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

文件:418.49 Kbytes Page:1 Pages

KEYSTONE

Keystone Electronics Corp.

Combination of Thin, Flexible

文件:659.91 Kbytes Page:2 Pages

ARIES

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

文件:115.71 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

High Voltage Differential FET Amplifier

文件:805.1 Kbytes Page:4 Pages

INTRONICS

CNY171S产品属性

  • 类型

    描述

  • 型号

    CNY171S

  • 功能描述

    晶体管输出光电耦合器 Optocoupler Hi Bvceo Phototrans SM-DIP6

  • RoHS

  • 制造商

    Vishay Semiconductors

  • 输入类型

    DC

  • 最大集电极/发射极电压

    70 V

  • 最大集电极/发射极饱和电压

    0.4 V

  • 绝缘电压

    5300 Vrms

  • 电流传递比

    100 % to 200 %

  • 最大正向二极管电压

    1.65 V

  • 最大输入二极管电流

    60 mA

  • 最大集电极电流

    100 mA

  • 最大功率耗散

    100 mW

  • 最大工作温度

    + 110 C

  • 最小工作温度

    - 55 C

  • 封装/箱体

    DIP-4

  • 封装

    Bulk

更新时间:2025-10-26 23:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
fsc
25+
500000
行业低价,代理渠道
FAIRCHILD/仙童
24+
NA/
270
优势代理渠道,原装正品,可全系列订货开增值税票
FAIRCHILD
2016+
SOP6
3000
只做原装,假一罚十,公司可开17%增值税发票!
ON/安森美
25+
2018
12390
原装正品,假一罚十!
CENTRAL
24+
SOD-123F
15000
公司现货库存,支持实单
FAIRCHILD
NEW
原厂封装
9526
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ON/安森美
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
LITEON/光宝
25+
SOP
880000
明嘉莱只做原装正品现货
FAIRCHILD
25+
800
公司优势库存 热卖中!
onsemi(安森美)
24+
SMD-6P
31277
正规渠道,大量现货,只等你来。

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