Phototransistor Optocouplers

Description The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. Features ■ UL recognized (File # E90700, Vol. 2) ■ VDE recognized – Add option V (e.g., CNY17F2VM) – File #102497 ■ Current transf

6-Pin DIP High BVCEO Phototransistor Optocouplers

Description The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in−line package. Features  High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)  Closely Matched Current Transfer Ratio (CTR) Min

6-Pin DIP High BV CEO Phototransistor Optocouplers

Features ■ High BV CEO : 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M) ■ Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation ■ Current Transfer Ratio In Select Groups ■ Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptabil

Phototransistor Optocouplers

Description The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Features ■ CNY17-1/2/3 are also available in white package by specifying -M suffix (eg. CNY17-2-M) ■ UL recognized (File # E90700) ■ VDE recognized – 102497 for white package – Ad

晶体管输出光电耦合器 Optocoupler Hi Bvceo Phototransistor

Phototransistor Optocouplers

Description The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. Features ■ UL recognized (File # E90700, Vol. 2) ■ VDE recognized – Add option V (e.g., CNY17F2VM) – File #102497 ■ Current transf