Ultra Low Power Microprocessor Reset IC

文件：144.15 Kbytes Page：7 Pages

H桥电机驱动器4.5~24V,0.9Ω,持续工作电流:0.8A,峰值:3A

CN8031是用于驱动可逆电机的H桥电机驱动器，可驱动一个DC电机，一个步进电机的绕组或其他负载。CN8031在4.5V至24V的电动机电源电压下工作，根据逻辑控制，它可以提供高达0.8A（ESOP-8）或0.65A（SOT23-6）的输出电流。CN8031由两个输入引脚控制。两个开/关输入确定输出模式：前进，后退，惯性停车或制动。当两个输入均处于低电平时，可以实现非常低的待机电路电流。CN8031可提供SOT23-6，SOP-8或ESOP-8封装。 • 0.8A最大连续输出\n• 高于3A的峰值电流能力\n• 低MOSFET导通电阻：Rhs =0.6Ω，Rls =0.3Ω\n• 正向，反向，惯性或制动输出模式\n• 适用于广泛的MCU控制逻辑\n• 输入逻辑迟滞\n• 热关断\n• ;

6.0V 3A 1.2MHz Synchronous Step-Down Regulator

COT Mode 6.0V/3A 1.2MHz Synchronous Step-Down Regulator

丝印代码：ABD；Ultra Low Power Microprocessor Reset IC

文件：144.15 Kbytes Page：7 Pages

丝印代码：ABC；Ultra Low Power Microprocessor Reset IC

文件：144.15 Kbytes Page：7 Pages

2 W, 806 to 905 MHz UHF POWER AMPLIFIERS

The RF Line UHF Power Amplifiers Capable of wide power range control as encountered in portable cellular radio applications (30 dB typical). • MHW803–2 806–870 MHz • Specified 7.5 Volt Characteristics RF Input Power = 1 mW (0 dBm) RF Output Power = 2 Watts Minimum Gain (VControl

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors