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MJE803晶体管资料

  • MJE803别名：MJE803三极管、MJE803晶体管、MJE803晶体三极管

  • MJE803生产厂家：美国摩托罗拉半导体公司

  • MJE803制作材料：Si-N+Darl+Di

  • MJE803性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L

  • MJE803封装形式：直插封装

  • MJE803极限工作电压：80V

  • MJE803最大电流允许值：4A

  • MJE803最大工作频率：<1MHZ或未知

  • MJE803引脚数：3

  • MJE803最大耗散功率：40W

  • MJE803放大倍数：β>750

  • MJE803图片代号：B-21

  • MJE803vtest：80

  • MJE803htest：999900

  • MJE803atest：4

  • MJE803wtest：40

  • MJE803代换 MJE803用什么型号代替：BD263A,BD679,BD779,FD50B,2N6039,

MJE803价格

参考价格：￥1.2115

型号：MJE803G 品牌：ON 备注：这里有MJE803多少钱，2025年最近7天走势，今日出价，今日竞价，MJE803批发/采购报价，MJE803行情走势销售排行榜，MJE803报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJE803

Monolithic Construction With Built-in Base- Emitter Resistors

Monolithic Construction With Built-in Base Emitter Resistors ​​​​​​​ • High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MJE803

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

ONSEMI

安森美半导体

MJE803

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices.

Central

MJE803

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

Motorola

摩托罗拉

MJE803

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • With TO-126 package • Complement to type MJE700/701/702/703 • High DC current gain • DARLINGTON APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications

ISC

无锡固电

MJE803

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type MJE700/701/702/703 • High DC current gain • DARLINGTON APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications

ISC

无锡固电

MJE803

Plastic Darlington Complementary Silicon Power Transistors

... designed for general-purpose amplifier and low-speed switching applications. • High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJE803

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type MJE700/701/702/703 • High DC current gain • DARLINGTON APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications

SAVANTIC

MJE803

SILICON NPN POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJE802 and MJE803 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec SOT-32 plastic package.They are intended for use in medium power linear and switching applications. ■ SGS-THOMSON PREFERRED SALESTYPES

STMICROELECTRONICS

意法半导体

MJE803

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN DARL 80V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJE803

Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

Central

MJE803

Trans Darlington NPN 80V 4A 3-Pin(3+Tab) TO-126

NJS

MJE803

Silicon NPN Power Transistors

文件：104.62 Kbytes Page：3 Pages

SAVANTIC

MJE803

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

文件：84.77 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJE803G

Plastic Darlington Complementary Silicon Power Transistors

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

ONSEMI

安森美半导体

MJE803T

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

MOSPEC

统懋

MJE803T

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector–Emitter Breakdown Voltage— : V(BR)CEO = 80 V • DC Current Gain— : hFE = 750(Min) @ IC= 2A • Complement to Type MJE703T APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications

ISC

无锡固电

MJE803G

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

文件：84.77 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJE803STU

TRANS NPN DARL 80V 4A TO126

ONSEMI

安森美半导体

MJE803STU

封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS NPN DARL 80V 4A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

803

M8 Plastic Passive I/O Box

文件：183.15 Kbytes Page：3 Pages

ALPHAWIREAlpha Wire

阿尔法电线

803

Panel Mount for 6.3x32 mm Fuses

文件：380.44 Kbytes Page：1 Pages

Littelfuse

力特

803

Panel Mount for 6.3x32 mm Fuses

文件：380.83 Kbytes Page：1 Pages

Littelfuse

力特

803

Horizontal Mount Toroidal Inductors

文件：183.31 Kbytes Page：2 Pages

MuRata

村田

803

absolute maximum ratings

文件：46 Kbytes Page：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJE803产品属性

  • 类型

    描述

  • 型号

    MJE803

  • 功能描述

    达林顿晶体管 4A 80V Bipolar

  • RoHS

    否

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

MJE803供应商更多...

更新时间：2025-9-24 15:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市百诺芯科技有限公司
MJE803
MOTOROLA/摩托罗拉
23+
TO-225AATO-126
24190
原装正品代理渠道价格优势
询价
深圳市纳立科技有限公司
MJE803G
三年内
1983
只做原装正品
询价
艾睿（深圳）半导体有限公司
MJE803G
ON
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市恒凯威科技开发有限公司
MJE803G
ON/安森美
21+
NA
12820
只做原装,质量保证
询价
深圳市科恒伟业电子有限公司
MJE803G
ON/安森美
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
询价
中天科工半导体（深圳）有限公司
MJE803
ONSEMI/安森美
25+
TO-126
45000
ONSEMI/安森美全新现货MJE803即刻询购立享优惠#长期有排单订
询价
深圳市航润创能电子集团有限公司
MJE803G
ON/安森美
21+
NA
350
只做原装,假一罚十
询价
深圳市一线半导体有限公司
MJE803
ON
24+
N/A
2500
询价
深圳市河锋鑫科技有限公司
MJE803
FAIRCHILD/仙童
2022+
TO-126
12888
原厂代理 终端免费提供样品
询价
深圳市亿智腾科技有限公司
MJE803
ON
24+
TO-126
6430
原装现货/欢迎来电咨询
询价

MJE803芯片相关品牌

MJE803规格书下载地址

MJE803参数引脚图相关

MJE803数据表相关新闻

DdatasheetPDF页码索引

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