型号 功能描述 生产厂家 企业 LOGO 操作

POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new

CHAMP

虹冠电子

POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new

CHAMP

虹冠电子

POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new

CHAMP

虹冠电子

POWER FIELD EFFECT TRANSISTOR

文件:241.15 Kbytes Page:7 Pages

CHAMP

虹冠电子

POWER FIELD EFFECT TRANSISTOR

文件:328.89 Kbytes Page:7 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

POWER FIELD EFFECT TRANSISTOR

文件:328.89 Kbytes Page:7 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

POWER FIELD EFFECT TRANSISTOR

文件:241.15 Kbytes Page:7 Pages

CHAMP

虹冠电子

POWER FIELD EFFECT TRANSISTOR

文件:241.15 Kbytes Page:7 Pages

CHAMP

虹冠电子

POWER FIELD EFFECT TRANSISTOR

文件:328.89 Kbytes Page:7 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

POWER FIELD EFFECT TRANSISTOR

文件:328.89 Kbytes Page:7 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

POWER FIELD EFFECT TRANSISTOR

文件:241.15 Kbytes Page:7 Pages

CHAMP

虹冠电子

FAST IGBT IN NPT TECHNOLOGY

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

INFINEON

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target app

INFINEON

英飞凌

SIPMO Power Transistor

SIPMOS® Power Transistor • N-Channel • Enhancement mode • Avalanche rated

SIEMENS

西门子

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件:397.15 Kbytes Page:13 Pages

INFINEON

英飞凌

N CHANNEL ENHANCEMENT MODE

文件:701.78 Kbytes Page:6 Pages

ETCList of Unclassifed Manufacturers

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CMT02N60G产品属性

  • 类型

    描述

  • 型号

    CMT02N60G

  • 功能描述

    POWER FIELD EFFECT TRANSISTOR

更新时间:2026-3-16 17:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
C-MEDIA
24+
VQFN88
18766
公司现货库存,支持实单
TW
2026+
TO-220
664
原装正品,假一罚十!
CHAMPION
23+
TO-220F
20000
专做原装正品,假一罚百!
CHAMPION
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
CMT
25+23+
TO-220F
15008
绝对原装正品全新进口深圳现货
CM
25+
TO-220F
2800
原装现货!可长期供货!
CMT
24+
TO-220
868
TW
2009
TO-220
506
全新 发货1-2天
MOSFET
专业铁帽
TO220
350
原装铁帽专营,代理渠道量大可订货
CHAMPION
23+
TO252
28888
原厂授权一级代理,专业海外优势订货,价格优势、品种

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