CMPD200价格
参考价格：￥0.3655
型号：CMPD2003TR-CUTTAPE 品牌：CENTRAL SEMICONDUCTOR 备注：这里有CMPD200多少钱，2026年最近7天走势，今日出价，今日竞价，CMPD200批发/采购报价，CMPD200行情走势销售排行榜，CMPD200报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CMPD200 | FORWARD REFERENCE DIODE DESCRIPTION The CENTRAL SEMICONDUCTOR CMPD200 series types are multi-chip silicon diodes mounted in a JEDEC DO-35 case. These devices are designed for applications requiring controlled forward voltage characteristics such as voltage regulation, sensing, and comparing. This series is a direct repl | CENTRAL |   | |
CMPD200 | Forward Reference Diodes 文件：51.16 Kbytes Page：1 Pages | CENTRAL | | |
CMPD200 | FORWARD REFERENCE DIODE | CENTRAL | | |
AN-1713 LM5116-12 Evaluation Board Introduction The LM5116-12 evaluation board is designed to provide the design engineer with a fully functional power converter based on Emulated Current Mode Control to evaluate the LM5116 controller IC. The evaluation board provides a 12V output with a 5A current capability. The operating inpu | TI 德州仪器 | | ||
SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE DESCRIPTION The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. | CENTRAL | | ||
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003A, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004A, CMPD2004C and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. | CENTRAL | | ||
SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE DESCRIPTION The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. | CENTRAL | | ||
SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE DESCRIPTION The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. | CENTRAL | | ||
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003A, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004A, CMPD2004C and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. | CENTRAL | | ||
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003A, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004A, CMPD2004C and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. | CENTRAL | | ||
SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE DESCRIPTION The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. | CENTRAL | | ||
SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE DESCRIPTION The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. | CENTRAL | | ||
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003A, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004A, CMPD2004C and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. | CENTRAL | | ||
HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003A, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004A, CMPD2004C and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. | CENTRAL | | ||
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003A, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004A, CMPD2004C and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. | CENTRAL | | ||
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003A, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004A, CMPD2004C and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. | CENTRAL | | ||
SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE DESCRIPTION The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. | CENTRAL | | ||
SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE DESCRIPTION The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. | CENTRAL | | ||
HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003A, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004A, CMPD2004C and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. | CENTRAL | | ||
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003A, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004A, CMPD2004C and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. | CENTRAL | | ||
SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2005S and CMPD2005SG each contain two (2) High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SOT-23 surface mount package, designed for applications requiring high voltage capability. MARKING CODES: C | CENTRAL | | ||
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE 文件：590.47 Kbytes Page：2 Pages | CENTRAL | | ||
HIGH VOLTAGE SILICON SWITCHING DIODE 文件：590.47 Kbytes Page：2 Pages | CENTRAL | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT） 描述：DIODE GEN PURP 200V 200MA SOT23 分立半导体产品 二极管 - 整流器 - 单 | CENTRAL | | ||
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE 文件：590.47 Kbytes Page：2 Pages | CENTRAL | | ||
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE 文件：590.47 Kbytes Page：2 Pages | CENTRAL | | ||
Surface mount Diode-Switching Dual: High Voltage: Common Anode | CENTRAL | | ||
HIGH VOLTAGE SILICON SWITCHING DIODE 文件：590.47 Kbytes Page：2 Pages | CENTRAL | | ||
HIGH VOLTAGE SILICON SWITCHING DIODE 文件：590.47 Kbytes Page：2 Pages | CENTRAL | | ||
Surface mount Diode-Switching Dual: High Voltage: Common Cathode | CENTRAL | | ||
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE 文件：590.47 Kbytes Page：2 Pages | CENTRAL | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：管件 描述：DIODE GEN PURP 200V 200MA SOT23 分立半导体产品 二极管 - 整流器 - 阵列 | CENTRAL | | ||
HIGH VOLTAGE SILICON SWITCHING DIODE 文件：590.47 Kbytes Page：2 Pages | CENTRAL | | ||
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE 文件：590.47 Kbytes Page：2 Pages | CENTRAL | | ||
HIGH VOLTAGE SILICON SWITCHING DIODE 文件：590.47 Kbytes Page：2 Pages | CENTRAL | | ||
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE 文件：590.47 Kbytes Page：2 Pages | CENTRAL | | ||
HIGH VOLTAGE SILICON SWITCHING DIODE 文件：590.47 Kbytes Page：2 Pages | CENTRAL | | ||
HIGH VOLTAGE SILICON SWITCHING DIODE 文件：590.47 Kbytes Page：2 Pages | CENTRAL | | ||
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE 文件：590.47 Kbytes Page：2 Pages | CENTRAL | | ||
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE 文件：590.47 Kbytes Page：2 Pages | CENTRAL | | ||
HIGH VOLTAGE SILICON SWITCHING DIODE 文件：590.47 Kbytes Page：2 Pages | CENTRAL | | ||
HIGH VOLTAGE SILICON SWITCHING DIODE 文件：590.47 Kbytes Page：2 Pages | CENTRAL | | ||
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE 文件：590.47 Kbytes Page：2 Pages | CENTRAL | | ||
SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES 文件：398.16 Kbytes Page：2 Pages | CENTRAL | | ||
HIGH VOLTAGE SILICON SWITCHING DIODES 文件：398.16 Kbytes Page：2 Pages | CENTRAL | | ||
SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES 文件：398.16 Kbytes Page：2 Pages | CENTRAL | | ||
HIGH VOLTAGE SILICON SWITCHING DIODES 文件：398.16 Kbytes Page：2 Pages | CENTRAL | | ||
HIGH VOLTAGE SILICON SWITCHING DIODES 文件：398.16 Kbytes Page：2 Pages | CENTRAL | | ||
SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES 文件：398.16 Kbytes Page：2 Pages | CENTRAL | | ||
HIGH POWER SWITCHING USE INSULATED TYPE HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current 200A • VCEX Collector-emitter voltage 600V • hFE DC current gain 75 • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION | MITSUBISHI 三菱电机 | | ||
HIGH POWER SWITCHING USE NON-INSULATED TYPE HIGH POWER SWITCHING USE NON-INSULATED TYPE • IC Collector current 200A • VCEX Collector-emitter voltage 350V • hFE DC current gain 100 • Non-Insulated Type APPLICATION Robotics, Welders, Forklifts, Golf cart | MITSUBISHI 三菱电机 | | ||
HIGH POWER GENERAL USE INSULATED TYPE HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current 200A • IF (AV) Average forward current 200A • VRRM Repetitive peak reverse voltage 400/800/1200/1600V • VDRM Repetitive peak off-state voltage 400/800/1200/1600V • MIX DOUBLE A | MITSUBISHI 三菱电机 | | ||
HIGH POWER GENERAL USE INSULATED TYPE HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current 200A • VRRM Repetitive peak reverse voltage 400/800/1200/1600V • VDRM Repetitive peak off-state voltage 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. | MITSUBISHI 三菱电机 | | ||
HIGH POWER GENERAL USE INSULATED TYPE HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current 200A • IF (AV) Average forward current 200A • VRRM Repetitive peak reverse voltage 400/800/1200/1600V • VDRM Repetitive peak off-state voltage 400/800/1200/1600V • MIX DOUBLE A | MITSUBISHI 三菱电机 | |
CMPD200产品属性
- 类型
描述
- Case：
SOT-23 (TO-236AB)
- Configuration/ Description：
Single
- VRRM MAX：
250V
- Io MAX：
200mA
- IFSM MAX：
4A
- IR MAX：
100nA
- @VR：
200V
- VF MAX：
1V
- @IF：
100mA
- trr MAX：
50ns
- CJ MAX：
5pF
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CENTRAL |
2016+ |
SOT23 |
2600 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
CENTRAL |
25+ |
SOT23 |
36951 |
CENTRAL全新特价CMPD2003TR即刻询购立享优惠#长期有货 |
|||
CENTRAL |
26+ |
DIP-14 |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
CENTRAL |
24+/25+ |
2875 |
原装正品现货库存价优 |
||||
CENTRAL |
2223+ |
SOT-23 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
CENTRAL |
26+ |
SOT-23 |
9750 |
绝对原装现货,价格低,欢迎询购! |
|||
强茂 |
26+ |
TO-3P |
86720 |
全新原装正品价格最实惠 承诺假一赔百 |
|||
CENERAL |
2430+ |
SOT23 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
CENTRAL |
25+ |
SOT-23 |
1107 |
普通 |
|||
Central Semiconductor |
21+ |
DFN |
200 |
只做原装鄙视假货15118075546 |
CMPD200规格书下载地址
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