SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE

DESCRIPTION The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004C, and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.

SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2003A, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004A, CMPD2004C and CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.

HIGH VOLTAGE SILICON SWITCHING DIODE

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SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE

文件：590.47 Kbytes Page：2 Pages

Surface mount Diode-Switching Dual: High Voltage: Common Cathode

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：管件 描述：DIODE GEN PURP 200V 200MA SOT23 分立半导体产品 二极管 - 整流器 - 阵列

丝印代码：A3；Silicon MMIC amplifier

DESCRIPTION Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • Integrated temperature compensated biasing • Con

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors Designed primarily for large–signal output and driver amplifier stages in the 1.0 to 2.3 GHz frequency range. • Designed for Class B or C, Common Base Power Amplifiers • Specified 28 Volt, 2.0 GHz Characteristics: Output Power — 1.0 to 20 Watts P

High Current/Voltage Darlington Drivers

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High Current/Voltage Darlington Drivers

文件：194.56 Kbytes Page：6 Pages

High Current/Voltage Darlington Drivers

文件：194.56 Kbytes Page：6 Pages