15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

Description Cree’s CMPA2735015S is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift vel

封装/外壳：32-VFQFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：25W GAN MMIC PA, 28V, 2.7-3.5GHZ RF/IF，射频/中频和 RFID 射频放大器

15 W, 2.7 to 3.5 GHz, 50 V, GaN MMIC Power Amplifier

包装：盒 描述：2.5-6.0GHZ, AMP W/ CMPA2560025F 开发板，套件，编程器 射频评估和开发套件，开发板

15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

Description Cree’s CMPA2735015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift ve

15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

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