CMF10120D价格
参考价格：￥111.4750
型号：CMF10120D 品牌：Cree 备注：这里有CMF10120D多少钱，2026年最近7天走势，今日出价，今日竞价，CMF10120D批发/采购报价，CMF10120D行情走势销售排行榜，CMF10120D报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CMF10120D | Silicon Carbide Power MOSFET Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET | CREE 科锐 |   | |
CMF10120D | MOSFET N-CH 1200V 42A TO-247-3 | WOLFSPEED | | |
MICROWAVE POWER TRANSISTOR NPN SILICON The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 7.6 dB Min., 8.5 dB (Typ) • 100 Tested fo | MACOM | | ||
MICROWAVE POWER TRANSISTOR The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 8.0 dB Min., 9.2 dB (Typ) • 100 Tested for | MOTOROLA 摩托罗拉 | | ||
SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS SCANSWITCH Power Rectifier For High and Very High Resolution Monitors This state–of–the–art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the M | MOTOROLA 摩托罗拉 | | ||
SCANSWITCH RECTIFIER 10 AMPERES 1200 VOLTS SCANSWITCH Power Rectifier For High and Very High Resolution Monitors This state–of–the–art power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. In these applications, the outstanding performance of the M | MOTOROLA 摩托罗拉 | | ||
120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime a | ERICSSON 爱立信 | |
CMF10120D产品属性
- 类型
描述
- 技术：
SiCFET（碳化硅）
- 漏源电压（Vdss）：
1200V
- 电流 - 连续漏极（Id）（25°C 时）：
24A（Tc）
- 驱动电压（最大 Rds On，最小 Rds On）：
20V
- 不同 Id，Vgs 时的 Rds On（最大值）：
220 毫欧 @ 10A，20V
- 不同 Id 时的 Vgs（th）（最大值）：
4V @ 500µA
- 不同 Vgs 时的栅极电荷 （Qg）（最大值）：
47.1nC @ 20V
- Vgs（最大值）：
+25V，-5V
- 不同 Vds 时的输入电容（Ciss）（最大值）：
928pF @ 800V
- 功率耗散（最大值）：
134W（Tc）
- 工作温度：
-55°C ~ 135°C（TJ）
- 安装类型：
通孔
- 供应商器件封装：
TO-247
- 封装/外壳：
TO-247-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Central |
20+ |
SOD-123F |
36800 |
原装优势主营型号-可开原型号增税票 |
|||
NTC/航臣 |
2025+ |
DIP |
32000 |
原装正品现货供应商原厂渠道物美价优 |
|||
CENTRAL |
23+ |
SOD-123F |
50000 |
原装正品 支持实单 |
|||
Central |
16+ |
SOD-123F |
90000 |
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥! |
|||
CENTRAL |
24+ |
SOD123 |
98000 |
原装现货假一罚十 |
|||
M/A-COM |
24+ |
SMD |
12800 |
||||
SYNERGY |
22+ |
NA |
1000 |
只做原装,价格优惠,长期供货。 |
|||
CREE |
24+ |
TO-247 |
43200 |
郑重承诺只做原装进口现货 |
|||
CMF-105SYNERGY |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
CENTRAL |
24+ |
SOD-123F |
9600 |
原装现货,优势供应,支持实单! |
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DdatasheetPDF页码索引
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