| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DUAL CATV BROADBAND HIGH LINEARITY GAAS HBT AMPLIFIER Product Description Stanford Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes l | STANFORD | |||
Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier Product Description Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes le | SIRENZA | |||
HEXFET Power MOSFET Description The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge | IRF | |||
Power MOSFET Description The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout ge | IRF | |||
Video Switch Matrix for DVDs Description The STV6618 is a highly integrated I²C bus-controlled video switch matrix, optimized for use in recordable Digital Video Disk applications or DVD players. It is adapted to video signals with 1H and 2H formats video routings. It provides required for connections to two external devices | STMICROELECTRONICS 意法半导体 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2016+ |
SMD |
6813 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
IOR |
23+ |
晶震 |
20000 |
全新原装假一赔十 |
|||
INFINEON/英飞凌 |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IRF6618TR1 |
25+ |
1000 |
1000 |
||||
Infineon Technologies |
22+ |
DirectFET? Isometric MT |
9000 |
原厂渠道,现货配单 |
|||
IR |
24+ |
QFN |
160821 |
明嘉莱只做原装正品现货 |
|||
IRVISHAY |
24+ |
NA |
35000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IR |
25+ |
SMD |
30000 |
原装现货,假一赔十. |
|||
IR |
2450+ |
QFN |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
IR |
25+ |
950 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
CGS6618芯片相关品牌
CGS6618规格书下载地址
CGS6618参数引脚图相关
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CGS6618数据表相关新闻
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射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT 7.9-9.6GHz, 50 Watt
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射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT Die DC-6.0GHz, 75 Watt
2019-12-7CH236
CH236,全新原装当天发货或门市自取0755-82732291.
2019-9-2CH315
CH315,全新原装当天发货或门市自取0755-82732291.
2019-9-1
DdatasheetPDF页码索引
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