30-W; DC – 6-GHz; 50-V; GaN HEMT

Up to 6 GHz Operation 30 W Typical Output Power 16 dB Gain Application circuit for 0.96 – 1.4 GHz 70% Efficiency at PSAT 50 V Operation • Up to 6 GHz Operation\n•30 W Typical Output Power\n•16 dB Gain\n•Application circuit for 0.96 – 1.4 GHz\n•70% Efficiency at PSAT\n•50 V Operation;

30 W, DC - 6 GHz, 50V, GaN HEMT

文件：1.16525 Mbytes Page：11 Pages

封装/外壳：440166 包装：托盘 描述：RF MOSFET HEMT 50V 440166 分立半导体产品 晶体管 - FET，MOSFET - 射频

30-W; DC – 6-GHz; 50-V; GaN HEMT

Up to 6 GHz Operation 30 W Typical Output Power 16 dB Gain Application circuit for 0.96 – 1.4 GHz 70% Efficiency at PSAT 50 V Operation • Up to 6 GHz Operation\n•16 dB Gain\n•70% Efficiency at PSAT\n•50 V Operation;

30 W, DC - 6 GHz, 50V, GaN HEMT

文件：1.16525 Mbytes Page：11 Pages

包装：散装 描述：CGHV40030F DEVELOPMENT BOARD 开发板，套件，编程器 射频评估和开发套件，开发板

STRIPLINE PACKAGED SCHOTTKY MIXER DIODES

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Stripline Packaged Schottky Mixer Diodes

400 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

SCHOTTKY DIODES MODULE TYPE 400A

SCHOTTKY DIODES MODULE TYPE 400A Features High Surge Capability Types Up to 100V VRRM

Triple Voltage Monitor with Intergrated CPU Supervisor

The X40030, X40031, X40034, X40035 combine power-on reset control, watchdog timer, supply voltage supervision, second and third voltage supervision, and manual reset, in one package. This combination lowers system cost, reduces board space requirements, and increases reliability. Features