100 W, 1800-2200 MHz, GaN HEMT for LTE

文件：1.00664 Mbytes Page：11 Pages

封装/外壳：440162 包装：卷带（TR） 描述：RF MOSFET HEMT 50V 440162 分立半导体产品 晶体管 - FET，MOSFET - 射频

100 W, 1800-2200 MHz, GaN HEMT for LTE

文件：1.00664 Mbytes Page：11 Pages

Voltage Output Temperature Sensor with Signal Conditioning

GENERAL DESCRIPTION The AD22100 is a monolithic temperature sensor with on-chip signal conditioning. It can be operated over the temperature range −50°C to +150°C, making it ideal for use in numerous HVAC, instrumentation, and automotive applications. The signal conditioning eliminates the n

4 X 4 CROSSPOINT SWITCH WITH CONTROL MEMORY

DESCRIPTION The M22100 combines a 4 x 4 array of crosspoints (transmission gates) with a 4 line to 16 line decoder and 16 latch circuits. Any one of the sixteen transmission gates (crosspoints) can be selected by applying the appropriate four line address. The selected transmission gate can be

CROSSPOINT SWITCH WITH CONTROL MEMORY CMOS IC

The µPD22100 consists of 16 crosspoint switches organized in 4 rows and 4 columns, and the µPD22148 consists of 32 crosspoint switches organized in 4 row and 8 columns. Any of the 16 or 32 switches can be selected by applying appropriate address. The selected crosspoint turns on if during strobe a

CROSSPOINT SWITCH WITH CONTROL MEMORY CMOS IC

The µPD22100 consists of 16 crosspoint switches organized in 4 rows and 4 columns, and the µPD22148 consists of 32 crosspoint switches organized in 4 row and 8 columns. Any of the 16 or 32 switches can be selected by applying appropriate address. The selected crosspoint turns on if during strobe a

CROSSPOINT SWITCH WITH CONTROL MEMORY CMOS IC

The µPD22100 consists of 16 crosspoint switches organized in 4 rows and 4 columns, and the µPD22148 consists of 32 crosspoint switches organized in 4 row and 8 columns. Any of the 16 or 32 switches can be selected by applying appropriate address. The selected crosspoint turns on if during strobe a