120 W, 6.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs o

120 W, 6.0 GHz, GaN HEMT Die

Cree’s CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power de

120-W, 6.0-GHz, GaN HEMT Die

High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

[Sirectifier] FEATURES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubbe

SI-60120-F

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REGULATED 3.3 V, 200-mA HIGH EFFICIENCY CHARGE PUMP DC/DC CONVERTERS

文件：561.83 Kbytes Page：27 Pages

REGULATED 3.3 V, 200-mA HIGH EFFICIENCY CHARGE PUMP DC/DC CONVERTERS

文件：561.83 Kbytes Page：27 Pages

REGULATED 3.3 V, 200-mA HIGH EFFICIENCY CHARGE PUMP DC/DC CONVERTERS

文件：561.83 Kbytes Page：27 Pages