Description

Wolfspeed’s CGH60120D is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT). GaN has superior properties compared to silicon or gallium

arsenide, including higher breakdown voltage, higher saturated electron drift

velocity, and higher thermal conductivity. GaN HEMTs offer greater power

density and wider bandwidths compared to Si and GaAs transistors.

Large Signal Models Available for ADS and MWO

Features

• 13 dB Typical Small Signal Gain at 4 GHz

• 12 dB Typical Small Signal Gain at 6 GHz

• 120 W Typical PSAT

• 28 V Operation

• High Breakdown Voltage

• High Temperature Operation

• Up to 6 GHz Operation

• High Efficiency

Applications

• 2-Way Private Radio

• Broadband Amplifiers

• Cellular Infrastructure

• Test Instrumentation

• Class A, AB, Linear amplifiers suitable for OFDM,

W-CDMA, LTE, EDGE, CDMA waveforms