90 W RF Power GaN HEMT

The CGH40090PP is an unmatched; gallium-nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP; operating from a 28 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth cap ·Up to 2.5 GHz Operation\n·16 dB Small Signal Gain at 2.0 GHz\n·100 W Typical PSAT\n·55% Efficiency at PSAT\n·28 V Operation;

90 W, RF Power GaN HEMT

Description Cree’s CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain

90 W, RF Power GaN HEMT

文件：1.43751 Mbytes Page：13 Pages

90 W, RF Power GaN HEMT

文件：1.43751 Mbytes Page：13 Pages

包装：散装 描述：CGH40090PP DEV BOARD WITH HEMT 开发板，套件，编程器 射频评估和开发套件，开发板

包装：散装 描述：BOARD DEMO AMP CIRCUIT CGH40090 开发板，套件，编程器 射频评估和开发套件，开发板

90 W, RF Power GaN HEMT

文件：1.43751 Mbytes Page：13 Pages

Schottky PowerMod

● Schottky Barrier Rectifier ● Guard Ring Protection ● 400 Amperes/80-100 Volts ● 175°C Junction Temperature ● Reverse Energy Tested ● ROHS Compliant

Schottky PowerMod

文件：122.59 Kbytes Page：2 Pages

HIGH FREQUENCY MULTIPHASE CONTROLLER

文件：467.45 Kbytes Page：24 Pages