Description

Cree’s CGH40090PP is an unmatched, gallium nitride (GaN) high

electron mobility transistor (HEMT). The CGH40090PP, operating

from a 28 volt rail, offers a general purpose, broadband solution

to a variety of RF and microwave applications. GaN HEMTs

offer high efficiency, high gain and wide bandwidth capabilities

making the CGH40090PP ideal for linear and compressed

amplifier circuits. The transistor is available in a 4-lead flange

package

Features

• Up to 2.5 GHz Operation

• 16 dB Small Signal Gain at 2.0 GHz

• 100 W Typical PSAT

• 55 Efficiency at PSAT

• 28 V Operation