45 W, RF Power GaN HEMT

文件：1.47264 Mbytes Page：15 Pages

封装/外壳：440206 包装：托盘 描述：45W, GAN HEMT, 28V, DC-4.0GHZ, P 分立半导体产品 晶体管 - FET，MOSFET - 射频

45-W RF Power GaN HEMT

45 W, RF Power GaN HEMT

文件：1.47264 Mbytes Page：15 Pages

45 W, RF Power GaN HEMT

文件：1.47264 Mbytes Page：15 Pages

Schottky PowerMod

● Schottky Barrier Rectifier ● Guard Ring Protection ● 400 Amperes/ 30 to 50 Volts ● 175°C Junction Temperature ● Reverse Energy Tested ● ROHS Compliant

Stripline Packaged Schottky Mixer Diodes

400 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

POWERTAP II??SWITCHMODE??Power Rectifier

POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: Features: • Dual Diode Construction — May be Paralleled for Higher Current Output • Guardring for Stress Protection • Lo

SCHOTTKY BARRIER RECTIFIER

SWITCHMODE Schottky Barrier Rectifier POWERTAP II Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high f