45 W, DC - 4 GHz RF Power GaN HEMT

Description Wolfspeed’s CGH40045 is an unmatched, gallium nitride (GaN) highelectron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMT soffer high efficiency, high gain

45 W RF Power GaN HEMT

Note: CGH40045F/P are Not Recommended for New Designs. Refer to CG2H40045F/P. The CGH40045 is an unmatched; gallium-nitride (GaN) high electron mobility transistor (HEMT). The CGH40045; operating from a 28 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave appl ·Up to 4 GHz Operation\n·16 dB Small Signal Gain at 2.0 GHz\n·12 dB Small Signal Gain at 4.0 GHz\n·55 W Typical PSAT\n·55% Efficiency at PSAT\n·28 V Operation;

45 W, RF Power GaN HEMT

文件：1.09309 Mbytes Page：12 Pages

45-W RF Power GaN HEMT

Up to 4 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 12 dB Small Signal Gain at 4.0 GHz 55 W Typical PSAT 55% Efficiency at PSAT 28 V Operation • Up to 4 GHz Operation\n•16 dB Small Signal Gain at 2.0 GHz\n•12 dB Small Signal Gain at 4.0 GHz\n•55 W Typical PSAT\n•55% Efficiency at PSAT\n•28 V Operation;

45-W RF Power GaN HEMT

Up to 4 GHz Operation 16 dB Small Signal Gain at 2.0 GHz 12 dB Small Signal Gain at 4.0 GHz 55 W Typical PSAT 55% Efficiency at PSAT 28 V Operation • Up to 4 GHz Operation\n•16 dB Small Signal Gain at 2.0 GHz\n•12 dB Small Signal Gain at 4.0 GHz\n•55 W Typical PSAT\n•55% Efficiency at PSAT\n•28 V Operation;

45 W, RF Power GaN HEMT

文件：1.47264 Mbytes Page：15 Pages

45 W, RF Power GaN HEMT

文件：1.47264 Mbytes Page：15 Pages

包装：散装 描述：CGH40045F DEV BOARD WITH HEMT 开发板，套件，编程器 射频评估和开发套件，开发板

包装：散装 描述：BOARD DEMO AMP CIRCUIT CGH40045 开发板，套件，编程器 射频评估和开发套件，开发板

45 W, RF Power GaN HEMT

文件：1.47264 Mbytes Page：15 Pages

45 W, RF Power GaN HEMT

文件：1.47264 Mbytes Page：15 Pages

45 W, RF Power GaN HEMT

文件：1.47264 Mbytes Page：15 Pages

45 W, RF Power GaN HEMT

文件：1.47264 Mbytes Page：15 Pages

Schottky PowerMod

● Schottky Barrier Rectifier ● Guard Ring Protection ● 400 Amperes/ 30 to 50 Volts ● 175°C Junction Temperature ● Reverse Energy Tested ● ROHS Compliant

Stripline Packaged Schottky Mixer Diodes

400 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

POWERTAP II??SWITCHMODE??Power Rectifier

POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: Features: • Dual Diode Construction — May be Paralleled for Higher Current Output • Guardring for Stress Protection • Lo

SCHOTTKY BARRIER RECTIFIER

SWITCHMODE Schottky Barrier Rectifier POWERTAP II Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high f