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CEU4价格

参考价格：￥0.5101

型号：CEU4J2X7R1H104K125AE 品牌：TDK 备注：这里有CEU4多少钱，2025年最近7天走势，今日出价，今日竞价，CEU4批发/采购报价，CEU4行情走势销售排行榜，CEU4报价。

型号	功能描述	生产厂家企业	LOGO
CEU4	Multilayer Ceramic Chip Capacitors 文件：60.69 Kbytes Page：5 Pages	TDK 东电化	TDK
CEU4060A	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 15A, RDS(ON) = 85mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.	CET 华瑞	CET
CEU4060A	N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 15A, RDS(ON) = 85mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.	CET-MOS 华瑞	CET-MOS
CEU4060AL	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 15A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 95mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.	CET 华瑞	CET
CEU4060AL	N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 16A, RDS(ON) = 75mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 90mW @VGS = 5V. Lead free product is acquired.	CET-MOS 华瑞	CET-MOS
CEU40N10	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 37A, RDS(ON) = 32mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.	CET 华瑞	CET
CEU40N10	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 37A, RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.	CET-MOS 华瑞	CET-MOS
CEU40N20	N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 40A, RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant	CET-MOS 华瑞	CET-MOS
CEU4112A	N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 47A, RDS(ON) = 10.2 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 13 mW @VGS = 4.5V.	CET-MOS 华瑞	CET-MOS
CEU4175	P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -31A, RDS(ON) = 18.5mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 25mW @VGS = -4.5V. RoHS compliant.	CET-MOS 华瑞	CET-MOS
CEU41A2	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 20V, 36A, RDS(ON) = 20mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.	CET 华瑞	CET
CEU4201	P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -40V, -28A, RDS(ON) = 26mΩ @VGS = -10V. RDS(ON) = 36mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.	CET 华瑞	CET
CEU4204	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 40V, 24A, RDS(ON) = 30mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.	CET 华瑞	CET
CEU4204	N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 24A, RDS(ON) = 28mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 42mW @VGS = 4.5V. Lead free product is acquired.	CET-MOS 华瑞	CET-MOS
CEU4269	Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES ■ 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. ■ -40V , -12A , RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capab	CET 华瑞	CET
CEU4269	Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 40V , 14A , RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RDS(ON) = 46mW @VGS = 4.5V. -40V , -12A , RDS(ON) = 45mW @VGS = 10V. RDS(ON) = 65mW @VGS = 4.5V. TO-252-4L package. Lead free product is acquir	CET-MOS 华瑞	CET-MOS
CEU4279	Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES ■ 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. ■ -40V , -9A , RDS(ON) = 72mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabil	CET 华瑞	CET
CEU4279	Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 40V , 14A , RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-252-4L package. RDS(ON) = 46mW @VGS = 4.5V. Lead free product is acquired. -40V , -9A , RDS(ON) = 72mW @VGS = 10V. RDS(ON) = 110mW @VGS = 4.	CET-MOS 华瑞	CET-MOS
CEU4301	P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -40V, -20A, RDS(ON) = 42mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.	CET 华瑞	CET
CEU4301	P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -20A, RDS(ON) = 42mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 65mW @VGS = -4.5V. Lead free product is acquired.	CET-MOS 华瑞	CET-MOS
CEU4311	P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -30V, -33A, RDS(ON) = 18mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.	CET 华瑞	CET
CEU4311	P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -33A, RDS(ON) = 18mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 30mW @VGS = -4.5V. Lead free product is acquired.	CET-MOS 华瑞	CET-MOS
CEU4060A	N-Channel Enhancement Mode Field Effect Transistor 文件：404.2 Kbytes Page：4 Pages	CET 华瑞	CET
CEU4060AL	N-Channel Enhancement Mode Field Effect Transistor 文件：403.11 Kbytes Page：4 Pages	CET 华瑞	CET
CEU4060AL	N-Channel 60 V (D-S) MOSFET 文件：1.00668 Mbytes Page：8 Pages	VBSEMI 微碧半导体	VBSEMI
CEU4060AL	N Channel MOSFET	CET 华瑞	CET
CEU40N10	N Channel MOSFET	CET 华瑞	CET
CEU40N10	N-Channel MOSFET uses advanced SGT technology 文件：988.95 Kbytes Page：4 Pages	DOINGTER 杜因特	DOINGTER
CEU40N20	N Channel MOSFET	CET 华瑞	CET
CEU4204	N-Channel MOSFET uses advanced trench technology 文件：764.3 Kbytes Page：5 Pages	DOINGTER 杜因特	DOINGTER
CEU4269_10	Dual Enhancement Mode Field Effect Transistor (N and P Channel) 文件：590.3 Kbytes Page：7 Pages	CET 华瑞	CET
CEU4311	P-Channel 30-V (D-S) MOSFET 文件：1.025589 Mbytes Page：9 Pages	VBSEMI 微碧半导体	VBSEMI
CEU4531	P-Channel Enhancement Mode Field Effect Transistor 文件：106.25 Kbytes Page：4 Pages	CET 华瑞	CET
CEU4J2X7R1H104K125AE	Automotive Grade ( Serial Design ) 文件：138.83 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R1H104K125AE	封装/外壳：0805（2012 公制）包装：剪切带（CT）带盒（TB）描述：CAP CER 0.1UF 50V X7R 0805 电容器陶瓷电容器	TDK 东电化	TDK
CEU4J2X7R1H104M125AE	封装/外壳：0805（2012 公制）包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：CAP CER 0.1UF 50V X7R 0805 电容器陶瓷电容器	TDK 东电化	TDK
CEU4J2X7R1H104M125AE	Automotive Grade ( Serial Design ) 文件：138.83 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R1H223K125AE	Automotive Grade ( Serial Design ) 文件：138.76 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R1H223M125AE	Automotive Grade ( Serial Design ) 文件：138.77 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R1H333K125AE	Automotive Grade ( Serial Design ) 文件：139.05 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R1H333M125AE	Automotive Grade ( Serial Design ) 文件：139.05 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R1H473K125AE	Automotive Grade ( Serial Design ) 文件：138.64 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R1H473M125AE	Automotive Grade ( Serial Design ) 文件：138.63 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R1H683K125AE	Automotive Grade ( Serial Design ) 文件：138.83 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R1H683M125AE	Automotive Grade ( Serial Design ) 文件：138.83 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R2A102K125AE	Automotive Grade ( Serial Design ) 文件：138.85 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R2A102M125AE	Automotive Grade ( Serial Design ) 文件：138.84 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R2A103K125AE	Automotive Grade ( Serial Design ) 文件：138.97 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R2A103M125AE	Automotive Grade ( Serial Design ) 文件：138.97 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R2A152K125AE	Automotive Grade ( Serial Design ) 文件：138.63 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R2A152M125AE	Automotive Grade ( Serial Design ) 文件：138.64 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R2A153K125AE	Automotive Grade ( Serial Design ) 文件：138.87 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R2A153M125AE	Automotive Grade ( Serial Design ) 文件：138.87 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R2A222K125AE	Automotive Grade ( Serial Design ) 文件：138.82 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R2A222M125AE	Automotive Grade ( Serial Design ) 文件：138.81 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R2A332K125AE	Automotive Grade ( Serial Design ) 文件：138.98 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R2A332M125AE	Automotive Grade ( Serial Design ) 文件：138.98 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R2A472K125AE	Automotive Grade ( Serial Design ) 文件：139.06 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R2A472M125AE	Automotive Grade ( Serial Design ) 文件：139.05 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU4J2X7R2A682K125AE	Automotive Grade ( Serial Design ) 文件：139.15 Kbytes Page：1 Pages	TDK 东电化	TDK

CEU4产品属性

类型
描述
型号
CEU4
制造商
TDK
制造商全称
TDK Electronics
功能描述
Multilayer Ceramic Chip Capacitors

CEU4供应商更多...

更新时间：2025-12-24 23:51:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科达星科技有限公司	CEU4060AL	CET	24+	TO-252	27500	原装正品,价格最低!	询价
深圳市得捷芯城科技有限公司	CEU4531	CET/華瑞	24+	NA/	4230	原装现货,当天可交货,原型号开票	询价
深圳市高捷芯城科技有限公司	CEU4J2X7R2A682K125AE	TDK	24+	0805	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市凌旭科技有限公司	CEU4301	CET	2016+	TO-252	3000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市明嘉莱科技有限公司	CEU40N10IC	CET/華瑞	25+	TO-252	156792	明嘉莱只做原装正品现货	询价
谛辉(北京/上海/青岛 )电子科技有限公司	CEU4269	CET	25+	DIP-14	18000	原厂直接发货进口原装	询价
深圳市科芯源微电子有限公司	CEU4060AL	UTC/友顺	25+	TO-252	54648	百分百原装现货实单必成	询价
中天科工半导体（深圳）有限公司	CEU40N10	CET/華瑞	25+	TO-252	33959	CET/華瑞全新特价CEU40N10即刻询购立享优惠#长期有货	询价
深圳市恒达亿科技有限公司	CEU4269	CET	25+	TO252	4500	全新原装、诚信经营、公司现货销售!	询价
深圳市毅创腾电子科技有限公司	CEU4060AL	CET	23+	TO252	7000	绝对全新原装!100%保质量特价!请放心订购!	询价

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CEU4规格书下载地址

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CEU4数据表相关新闻

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CEU4价格

CEU4产品属性

CEU4供应商更多...

CEU4芯片相关品牌

CEU4规格书下载地址

CEU4参数引脚图相关

CEU4数据表相关新闻

CF0505XT

CERN科学家设计出能在设施之间运输反物质的装置

CES-434313-28PM-67

CF04V3T2R0F 深圳市得捷芯城电子科技 AVX KEMET 尼康 三洋 钽电容代理商

CF0505XT-1WR3原装正品现货 CF0505XT-1WR3DC-DC电源模块/

CeraCharge电池Z62000Z2910Z01Z05

DdatasheetPDF页码索引

CF04V3T2R0F 深圳市得捷芯城电子科技 AVX KEMET 尼康三洋钽电容代理商