CEU4价格

参考价格:¥0.5101

型号:CEU4J2X7R1H104K125AE 品牌:TDK 备注:这里有CEU4多少钱,2026年最近7天走势,今日出价,今日竞价,CEU4批发/采购报价,CEU4行情走势销售排行榜,CEU4报价。
型号 功能描述 生产厂家 企业 LOGO 操作
CEU4

Multilayer Ceramic Chip Capacitors

文件:60.69 Kbytes Page:5 Pages

TDK

东电化

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 15A, RDS(ON) = 85mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 15A, RDS(ON) = 85mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 16A, RDS(ON) = 75mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 90mW @VGS = 5V. Lead free product is acquired.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 15A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 95mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 37A, RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 37A, RDS(ON) = 32mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 200V, 40A, RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 47A, RDS(ON) = 10.2 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 13 mW @VGS = 4.5V.

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -31A, RDS(ON) = 18.5mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 25mW @VGS = -4.5V. RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 36A, RDS(ON) = 20mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -28A, RDS(ON) = 26mΩ @VGS = -10V. RDS(ON) = 36mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 24A, RDS(ON) = 28mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 42mW @VGS = 4.5V. Lead free product is acquired.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 40V, 24A, RDS(ON) = 30mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. ■ -40V , -12A , RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capab

CET

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V , 14A , RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RDS(ON) = 46mW @VGS = 4.5V. -40V , -12A , RDS(ON) = 45mW @VGS = 10V. RDS(ON) = 65mW @VGS = 4.5V. TO-252-4L package. Lead free product is acquir

CET-MOS

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V , 14A , RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-252-4L package. RDS(ON) = 46mW @VGS = 4.5V. Lead free product is acquired. -40V , -9A , RDS(ON) = 72mW @VGS = 10V. RDS(ON) = 110mW @VGS = 4.

CET-MOS

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. ■ -40V , -9A , RDS(ON) = 72mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabil

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -40V, -20A, RDS(ON) = 42mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -40V, -20A, RDS(ON) = 42mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 65mW @VGS = -4.5V. Lead free product is acquired.

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -33A, RDS(ON) = 18mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 30mW @VGS = -4.5V. Lead free product is acquired.

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -33A, RDS(ON) = 18mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件:404.2 Kbytes Page:4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件:403.11 Kbytes Page:4 Pages

CET

华瑞

N-Channel 60 V (D-S) MOSFET

文件:1.00668 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N Channel MOSFET

CET

华瑞

N Channel MOSFET

CET

华瑞

N-Channel MOSFET uses advanced SGT technology

文件:988.95 Kbytes Page:4 Pages

DOINGTER

杜因特

N Channel MOSFET

CET

华瑞

N-Channel MOSFET uses advanced trench technology

文件:764.3 Kbytes Page:5 Pages

DOINGTER

杜因特

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

文件:590.3 Kbytes Page:7 Pages

CET

华瑞

P-Channel 30-V (D-S) MOSFET

文件:1.025589 Mbytes Page:9 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Field Effect Transistor

文件:106.25 Kbytes Page:4 Pages

CET

华瑞

封装/外壳:0805(2012 公制) 包装:剪切带(CT)带盒(TB) 描述:CAP CER 0.1UF 50V X7R 0805 电容器 陶瓷电容器

TDK

东电化

Automotive Grade ( Serial Design )

文件:138.83 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:138.83 Kbytes Page:1 Pages

TDK

东电化

封装/外壳:0805(2012 公制) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:CAP CER 0.1UF 50V X7R 0805 电容器 陶瓷电容器

TDK

东电化

Automotive Grade ( Serial Design )

文件:138.76 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:138.77 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:139.05 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:139.05 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:138.64 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:138.63 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:138.83 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:138.83 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:138.85 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:138.84 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:138.97 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:138.97 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:138.63 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:138.64 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:138.87 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:138.87 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:138.82 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:138.81 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:138.98 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:138.98 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:139.06 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:139.05 Kbytes Page:1 Pages

TDK

东电化

Automotive Grade ( Serial Design )

文件:139.15 Kbytes Page:1 Pages

TDK

东电化

CEU4产品属性

  • 类型

    描述

  • 型号

    CEU4

  • 制造商

    TDK

  • 制造商全称

    TDK Electronics

  • 功能描述

    Multilayer Ceramic Chip Capacitors

更新时间:2026-3-10 10:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CET/華瑞
新年份
TO-252
69850
一级代理原装正品现货,支持实单!
TDK/东电化
15+ROHS
SMD
187760
一级质量保证长期稳定提供货优价美
TDK
2026+
SMD
900000
优势贴片电容全新原装进口现货欢迎咨询
CET/華瑞
25+
TO-252
156792
明嘉莱只做原装正品现货
CET
24+
TO252
18000
原装正品 有挂有货 假一赔十
TDK
2019+
SMD
120000
原盒原包装 可BOM配套
CET
24+
TO-252
5000
只做原装公司现货
CET
23+24
TO-252
29850
原装正品优势渠道价格合理.可开13%增值税发票
CET
24+
TO-252
663300
郑重承诺只做原装进口现货
CET
25+
TO-252
90000
进口原装现货假一罚十价格合理

CEU4数据表相关新闻