N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 40V, 24A, RDS(ON) = 30mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 24A, RDS(ON) = 28mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 42mW @VGS = 4.5V. Lead free product is acquired.

N-Channel MOSFET uses advanced trench technology

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N Channel MOSFET

ROTARY MOTION | PRECISION SENSOR

Features • Servo Mount / Ball Bearing • 7/8” to 2” Diameter Servo Mount • Hybrid 3, 5 and 10-Turn Precision Potentiometers

Security & Sound, 4 Conductor 16 AWG BC, LSZH, Eca

Product Description Security & Commercial Audio Cable, 4-16 AWG stranded bare copper conductors with polypropylene insulation, LSZH jacket with ripcord, CPR Eca

Cable Holders - Adhesive Back Mount

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AND block

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Stereo Cap-less LINE-Amp and Video-Amp

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