N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 40V, 24A, RDS(ON) = 30mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 40V, 24A, RDS(ON) = 28mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 42mW @VGS = 4.5V. Lead free product is acquired.

N Channel MOSFET

N-Channel MOSFET uses advanced trench technology

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PNP Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47KΩ, R2=47KΩ) • Complement to FJNS3204R

Ultra-High-Speed, Low-Noise, Low-Power, SOT23 Open-Loop Buffers

General Description The MAX4200–MAX4205 are ultra-high-speed, open loop buffers featuring high slew rate, high output current, low noise, and excellent capacitive-load-driving capability. The MAX4200/MAX4201/MAX4202 are single buffers, while the MAX4203/MAX4204/MAX4205 are dual buffers. The MAX42

QUAD COMPARATOR

LOW POWER QUAD COMPARATOR The Fujitsu MB4204 is a Quad Comparator which consists of four independent channels. The MB4204 is designed to operate form either a single power or dual power supplies over a wide range of voltages. The input characteristics is equivalent of current industry standard co

3-7 WATT 48V INPUT ISOLATED DC-DC CONVERTER

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3-7 WATT 48V INPUT ISOLATED DC-DC CONVERTER

文件：215.5 Kbytes Page：3 Pages