Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. ■ -40V , -12A , RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capab

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V , 14A , RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RDS(ON) = 46mW @VGS = 4.5V. -40V , -12A , RDS(ON) = 45mW @VGS = 10V. RDS(ON) = 65mW @VGS = 4.5V. TO-252-4L package. Lead free product is acquir

N+P Power MOSFET

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 40V, 6.1A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. ■ -40V, -5.2A, RDS(ON) = 43mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability

CLEAR THRU-HOLE SPACER

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Nytye®Mounting Platforms

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AEC-Q100 Qualifies

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AEC-Q100 Qualifies

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