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型号 功能描述 生产厂家 企业 LOGO 操作
CEU20N06

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 20A, RDS(ON) = 55mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

CET

华瑞

CEU20N06

N-Channel Enhancement Mode Field Effect Transistor

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ETCList of Unclassifed Manufacturers

未分类制造商

CEU20N06

N-Channel 6 0-V (D-S) MOSFET

文件:899.41 Kbytes Page:6 Pages

VBSEMI

微碧半导体

CEU20N06

N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS V™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistancearea product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50

MOTOROLA

摩托罗拉

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand highenergy in the avalancheand commutation modes. This new energy efficient design also offers a drain–to–source diode with

MOTOROLA

摩托罗拉

TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

MOTOROLA

摩托罗拉

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS V™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistancearea product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50

MOTOROLA

摩托罗拉

N-channel TrenchMOS transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ Very low on-state resistance ■ Fast switching. Applications ■ Switched mode power supplies ■ DC to DC converters.

PHILIPS

飞利浦

CEU20N06产品属性

  • 类型

    描述

  • 型号

    CEU20N06

  • 功能描述

    N-Channel Enhancement Mode Field Effect Transistor

更新时间:2026-8-3 20:53:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CETSEMI
25+
TO-252
20300
CETSEMI原装特价CEU20N06即刻询购立享优惠#长期有货
VBsemi
21+
TO252
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CET/华瑞
SOT-252
8219
一级代理 原装正品假一罚十价格优势长期供货
CET/華瑞
24+
TO-252
200000
优质供应商,支持样品配送。原装诚信
CET
25+23+
TO-252
39699
绝对原装正品现货,全新深圳原装进口现货
CET
23+
TO252
7000
绝对全新原装!100%保质量特价!请放心订购!
CET
24+
TO252
130
VBsemi
25+
TO252
10065
原装正品,有挂有货,假一赔十
CET
09+
SOT-252
4170
全新 发货1-2天
SR
23+
TO252
5000
原装正品,假一罚十

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