位置：首页 > IC中文资料第10148页 > CEU16N10
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
CEU16N10 | N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,13.3A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 |  |   |
CEU16N10 | N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,13.3A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  | |
CEU16N10 | N-ChannelMOSFETusesadvancedtrenchtechnology 文件：5.01082 Mbytes Page：4 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 |  | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,13.3A,RDS(ON)=115mΩ@VGS=10V. RDS(ON)=125mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,13.3A,RDS(ON)=115mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. RDS(ON)=125mW@VGS=5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,12A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=165mW@VGS=3V. RDS(ON)=130mW@VGS=5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelMOSFETusesadvancedtrenchtechnology 文件：5.01071 Mbytes Page：4 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,15.2A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,15.2A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,15.2A,RDS(ON)=115mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=125mW@VGS=5V. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,15.2A,RDS(ON)=115mΩ@VGS=10V. RDS(ON)=125mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,11A,RDS(ON)=120mW@VGS=10V. RDS(ON)=135mW@VGS=5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | |
CEU16N10产品属性
- 类型
描述
- 型号
CEU16N10
- 制造商
CET
- 制造商全称
Chino-Excel Technology
- 功能描述
N-Channel Enhancement Mode Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
25+ |
TO-252 |
156571 |
明嘉莱只做原装正品现货 |
|||
CET/華瑞 |
24+ |
TO252 |
22055 |
郑重承诺只做原装进口现货 |
|||
TO252D-PAK |
22+ |
16 |
100000 |
代理渠道/只做原装/可含税 |
|||
CET/華瑞 |
24+ |
NA/ |
520 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
CET/華瑞 |
25+ |
TO-252 |
33955 |
CET/華瑞全新特价CEU16N10L即刻询购立享优惠#长期有货 |
|||
CET |
23+ |
TO-252 |
12800 |
公司只有原装 欢迎来电咨询。 |
|||
VB |
25+ |
TO252D-PAK |
10000 |
原装正品,假一罚十! |
|||
CET |
1726+ |
TO-252 |
6528 |
只做进口原装正品现货,假一赔十! |
|||
CET/華瑞 |
24+ |
TO-252 |
499553 |
免费送样原盒原包现货一手渠道联系 |
|||
CET |
23+ |
TO-252 |
28000 |
原装正品 |
CEU16N10芯片相关品牌
CEU16N10规格书下载地址
CEU16N10参数引脚图相关
- d402
- d325
- d2007
- d2004
- d2002
- d126
- d1004
- d1002
- c波段
- cw7805
- cs5532
- cs1
- cpld
- cp10
- connector
- cob
- cmos传感器
- cmos
- cm2006
- cicret
- CEU4301
- CEU4279
- CEU4269
- CEU4204
- CEU4201
- CEU41A2
- CEU3E2
- CEU3700
- CEU3423
- CEU3301
- CEU3252
- CEU3172
- CEU3120
- CEU3100
- CEU3070
- CEU3060
- CEU3055LA
- CEU3055L5
- CEU3055L3
- CEU3055L
- CEU301J
- CEU3
- CEU2K110CG470KB-T
- CEU2H0101
- CEU271J
- CEU270J
- CEU25N15L
- CEU2303
- CEU220J
- CEU21A3
- CEU21A2
- CEU2182
- CEU20P06
- CEU20N06
- CEU1710
- CEU16N10L
- CEU13N07
- CEU12P10
- CEU12N10L
- CEU12N10
- CEU1185
- CEU10P10
- CEU101J
- CEU1012L
- CEU1012
- CEU100D
- CEU06N7
- CEU05P03
- CEU04N7G
- CEU04N6
- CEU03N8
- CEU02N9
- CEU02N7G
- CEU02N7
- CEU02N6G
- CEU02N6A
- CEU02N6
- CEU01N7
- CEU01N6G
- CEU01N65A
- CEU01N65
- CEU01N6
- CET6861
- CET6601
- CET6426
- CET453N
- CET4301
- CET3252
- CET3055
- CET0215
- CES5735
CEU16N10数据表相关新闻
CF0505XT
CF0505XT
2023-3-23CERN科学家设计出能在设施之间运输反物质的装置
CERN科学家设计出能在设施之间运输反物质的装置
2022-11-25CES-434313-28PM-67
CES-434313-28PM-67
2021-8-2CF04V3T2R0F 深圳市得捷芯城电子科技 AVX KEMET 尼康 三洋 钽电容代理商
CF04V3T2R0F深圳市得捷芯城电子科技AVXKEMET尼康三洋钽电容代理商
2020-7-24CF0505XT-1WR3原装正品现货 CF0505XT-1WR3DC-DC电源模块/
CF0505XT-1WR3原装正品现货
2020-6-28CeraCharge电池Z62000Z2910Z01Z05
TDK的CeraCharge是首款可充电固态SMD电池
2019-11-21
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
