P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-40V,-6.3A,RDS(ON)=44mΩ@VGS=-10V. RDS(ON)=68mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-40V,-4.9A,RDS(ON)=57mΩ@VGS=-10V. RDS(ON)=85mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-8.8A,RDS(ON)=24mΩ@VGS=-10V. RDS(ON)=35mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

P-Channel 35 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •100UISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitches,AdaptorSwitch -NotebookPCs

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-8.8A,RDS(ON)=24mW@VGS=-10V. RDS(ON)=35mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-223package. Leadfreeproductisacquired.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ●30V,7.2A,RDS(ON)=35mW@VGS=10V.RDS(ON)=50mW@VGS=4.5V. ●HighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SOT-223Package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,8A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=42mΩ@VGS=4.5V. ■HighdensecelldesignforlowRDS(ON). ■Ruggedandreliable. ■SOT-223Package.