N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 8A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. ■ High dense cell design for low RDS(ON). ■ Rugged and reliable. ■ SOT-223 Package.

N-Channel Enhancement Mode Field Effect Transistor

N-CHANNEL POWER MOSFETS

FEATURES • Low Rds(on) ) at high voltage • Improved Inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysillcon gate cell structure • Low Input capacitance • Extended safe operating area • Improved high temperature reliability • TO-3 package (High v

N-CHANNEL POWER MOSFETS

Low-voltage avalanche regulator diodes

DESCRIPTION High performance voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The series consists of PLVA450A to PLVA468A. FEATURES • Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series • Hard breakdown knee • Low noise: a

CRT Display Video Output Amplifier

Features • Active load circuits • Wide bandwidth and high output voltage. Optimal for use in fH (horizontal deflection frequency) = 90 kHz class ultrahigh precision monitors. • Single 15-pin SIP molded package houses three channels.

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot = 1 Watt