P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-8.8A,RDS(ON)=24mΩ@VGS=-10V. RDS(ON)=35mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

P-Channel35V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •100UISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitches,AdaptorSwitch -NotebookPCs

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-8.8A,RDS(ON)=24mW@VGS=-10V. RDS(ON)=35mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-223package. Leadfreeproductisacquired.

P-ChannelEnhancementModePowerMOSFET

Description The4435usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

ARX4435TransceiverforMacairH009Specification

GeneralDescription TheAeroflexLaboratoriesIncorporatedmodelARX4435andARX4435FParenewgenerationmonolithictransceiverswhichprovidescompliancewithMacairH009databusrequirements. ThemodelARX4435andARX4435FPperformthefront-endanalogfunctionofinputtingandoutputtin

P-ChannelMOSFET

Plastic-EncapsulateMosfets FEATURES •AdvancedTrenchProcessTechnology •HighDensityCellDesignforUltraLowOn-Resistance •VDS=-30V,ID=-8A •RDS(on)(m-ohm) 0.020@VGS=-10V,ID=-8A 0.030@VGS=-4.5V,ID=-5A APPLICATIONS •LoadSwitches •B

P-Channel30-V(D-S)MOSFET

文件：1.00935 Mbytes Page：9 Pages

DELAYMODULES,TTL,SURFACEMOUNTED

文件：137.17 Kbytes Page：1 Pages