| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CEP6060 | N-Channel Enhancement Mode Field Effect Transistor 文件：510.01 Kbytes Page：5 Pages | CET 华瑞 |   | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 50A,RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 52.4A,RDS(ON) = 21mW @VGS = 10V. RDS(ON) = 25mW @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ● 60V, 60A,RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● TO-220 & TO-263 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 42A, RDS(ON) = 25mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 42A, RDS(ON) = 25mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor
| CET 华瑞 | | ||
N Channel MOSFET | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor 文件：405.18 Kbytes Page：4 Pages | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor | CET 华瑞 | | ||
N Channel MOSFET | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor 文件：81.68 Kbytes Page：4 Pages | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor 文件：81.68 Kbytes Page：4 Pages | CET 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a | FAIRCHILD 仙童半导体 | | ||
N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a | FAIRCHILD 仙童半导体 | | ||
DOUBLE HETEROJUNCTION AIGAAS RED LOW CURRENT DISPLAYS 文件：547.62 Kbytes Page：7 Pages | QT | | ||
Fast radio tuning PLL frequency synthesizer 文件：236.38 Kbytes Page：16 Pages | PHILIPS 飞利浦 | | ||
Fast radio tuning PLL frequency synthesizer 文件：236.38 Kbytes Page：16 Pages | PHILIPS 飞利浦 | |
CEP6060产品属性
- 类型
描述
- BVDSS(V)：
60
- Rds(on)mΩ@10V：
21
- Rds(on)mΩ@5V：
25
- ID(A)：
52.4
- Qg(nC)@10V(typ)：
45
- RθJC(℃/W)：
1.24
- Pd(W)：
120
- Configuration：
Single
- Polarity：
N
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
1932+ |
TO-220 |
359 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CET/華瑞 |
2450+ |
TO-220 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
CET |
26+ |
TO-220 |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
MICROCHIP |
25+ |
SOP |
30675 |
||||
CET |
25+23+ |
TO-220 |
22154 |
绝对原装正品全新进口深圳现货 |
|||
MICROCHIP |
24+ |
SOP |
30459 |
主营MICROCHIP全系列原装进口现货热卖 |
|||
MICROCHIP |
23+ |
SOP |
8600 |
受权代理!全新原装现货特价热卖! |
|||
CET |
25+ |
TO-220 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
CET |
23+ |
TO220/3 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
CET |
24+ |
TO-220 |
20000 |
CEP6060规格书下载地址
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DdatasheetPDF页码索引
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