N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 50A,RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 52.4A,RDS(ON) = 21mW @VGS = 10V. RDS(ON) = 25mW @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

N Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 60V, 60A,RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

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N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

DOUBLE HETEROJUNCTION AIGAAS RED LOW CURRENT DISPLAYS

文件：547.62 Kbytes Page：7 Pages

Fast radio tuning PLL frequency synthesizer

文件：236.38 Kbytes Page：16 Pages

Fast radio tuning PLL frequency synthesizer

文件：236.38 Kbytes Page：16 Pages