N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 60V, 60A,RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

DOUBLE HETEROJUNCTION AIGAAS RED LOW CURRENT DISPLAYS

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Fast radio tuning PLL frequency synthesizer

文件：236.38 Kbytes Page：16 Pages

Fast radio tuning PLL frequency synthesizer

文件：236.38 Kbytes Page：16 Pages