位置:首页 > IC中文资料第2608页 > CEP5
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V,50A,RDS(ON)=22mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■60V,50A,RDS(ON)=17mΩ(typ)@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
50A,60V Heatsink Planar N-Channel Power MOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply.Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-220M | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V,55A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■100V,50A,RDS(ON)=30mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,50A,RDS(ON)=30mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■-30V,-47A,RDS(ON)=20mΩ@VGS=-10V. RDS(ON)=32mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V,-47A,RDS(ON)=20mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=32mW@VGS=-4.5V. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■-55V,-50A,RDS(ON)=23mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -55V,-50A,RDS(ON)=23mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=28mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■30V,48A,RDS(ON)=16.5mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■100V,36A,RDS(ON)=48mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,36A,RDS(ON)=50mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. RDS(ON)=53mW@VGS=5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■100V,36A,RDS(ON)=53mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,36A,RDS(ON)=53mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,33A,RDS(ON)=40mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,36A,RDS(ON)=53mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-Channel MOSFET uses advanced trench technology 文件:1.14917 Mbytes Page:4 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | |||
N-Channel Enhancement Mode Field Effect Transistor 文件:687.08 Kbytes Page:4 Pages | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
ISDN S-Bus Common Mode Inductor 文件:24.21 Kbytes Page:1 Pages | FILTRAN FILTRAN Group | |||
CEPT/T1 Common Mode Inductor 文件:23.32 Kbytes Page:1 Pages | FILTRAN FILTRAN Group | |||
ISDN S-Bus Common Mode Inductor 文件:42.39 Kbytes Page:1 Pages | FILTRAN FILTRAN Group |
CEP5产品属性
- 类型
描述
- 型号
CEP5
- 制造商
SPC Multicomp
- 功能描述
PARTITION 2.5-10MM2
- 制造商
SPC Multicomp
- 功能描述
PARTITION, 2.5-10MM2
- 制造商
SPC Multicomp
- 功能描述
PARTITION, 2.5-10MM2; Accessory
- Type
Partition; For Use
- With
DIN Rail Screw Clamp Terminal Blocks ;RoHS
- Compliant
Yes
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CET/華瑞 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
CET/華瑞 |
TO-220 |
265209 |
假一罚十原包原标签常备现货! |
||||
CET |
23+ |
TO-220 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
23+ |
N/A |
38160 |
正品授权货源可靠 |
||||
CET |
23+ |
TO-220 |
6000 |
原装正品,支持实单 |
|||
CET |
TO-220 |
50000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
CET |
22+ |
TO-220 |
8900 |
英瑞芯只做原装正品!!! |
|||
CET |
21+ |
TO220 |
35200 |
一级代理/放心采购 |
|||
CET |
19+ |
TO-220 |
67758 |
原厂代理渠道,每一颗芯片都可追溯原厂; |
|||
CET |
2020+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
CEP5规格书下载地址
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DdatasheetPDF页码索引
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