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型号	功能描述	生产厂家&企业	LOGO
CEP50N06	N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A ,RDS(ON) = 22mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.	CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET-MOS
CEP50N06	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.	CET 华瑞	CET
CEP50N06	50A,60V Heatsink Planar N-Channel Power MOSFET General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220M	THINKISEMI 思祁半导体	THINKISEMI
CEP50N06G	N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 55A ,RDS(ON) = 20mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant.	CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET-MOS
CEP50N10	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 50A, RDS(ON) = 30mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package. ■ Lead free product is acquired.	CET 华瑞	CET
CEP50N10	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 50A, RDS(ON) = 30mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.	CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET-MOS
CEP50P03	P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -30V, -47A, RDS(ON) =20mΩ @VGS = -10V. RDS(ON) =32mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.	CET 华瑞	CET
CEP50P03	P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -47A, RDS(ON) =20mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =32mW @VGS = -4.5V. Lead free product is acquired.	CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET-MOS
CEP5175	P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -55V, -50A, RDS(ON) = 23mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package.	CET 华瑞	CET
CEP5175	P-Channel Enhancement Mode Field Effect Transistor FEATURES -55V, -50A, RDS(ON) = 23mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 28mW @VGS = 4.5V.	CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET-MOS
CEP51A3	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 48A, RDS(ON) =16.5mΩ @VGS = 10V. RDS(ON) =28mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.	CET 华瑞	CET
CEP540A	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 36A, RDS(ON) = 48mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.	CET 华瑞	CET
CEP540L	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 36A, RDS(ON) = 50mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired. RDS(ON) = 53mW @VGS = 5V.	CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET-MOS
CEP540N	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 100V, 36A, RDS(ON) = 53mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.	CET 华瑞	CET
CEP540N	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 36A, RDS(ON) = 53mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.	CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET-MOS
CEP550	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 33A, RDS(ON) = 40mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant.	CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET-MOS
CEP550A	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 36A, RDS(ON) = 53mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant.	CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司	CET-MOS
CEP50N06	N-Channel MOSFET uses advanced trench technology 文件：1.14917 Mbytes Page：4 Pages	DOINGTER 杜因特	DOINGTER
CEP540L	N-Channel Enhancement Mode Field Effect Transistor 文件：687.08 Kbytes Page：4 Pages	CET 华瑞	CET
CEP5710	ISDN S-Bus Common Mode Inductor 文件：24.21 Kbytes Page：1 Pages	FILTRANFiltran LTD 费尔兰特	FILTRAN
CEP5753	CEPT/T1 Common Mode Inductor 文件：23.32 Kbytes Page：1 Pages	FILTRANFiltran LTD 费尔兰特	FILTRAN
CEP5756	ISDN S-Bus Common Mode Inductor 文件：42.39 Kbytes Page：1 Pages	FILTRANFiltran LTD 费尔兰特	FILTRAN

CEP5产品属性

类型
描述
型号
CEP5
制造商
SPC Multicomp
功能描述
PARTITION 2.5-10MM2
制造商
SPC Multicomp
功能描述
PARTITION, 2.5-10MM2
制造商
SPC Multicomp
功能描述
PARTITION, 2.5-10MM2; Accessory
Type
Partition; For Use
With
DIN Rail Screw Clamp Terminal Blocks ;RoHS
Compliant
Yes

CEP5供应商更多...

更新时间：2025-8-17 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	CEP50N06	CET/華瑞	24+	NA/	748	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市凌旭科技有限公司	CEP50N06	CET	2016+	TO-220	3500	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市科恒伟业电子有限公司	CEP50N06	CET品牌	2016+	TO-220	6528	房间原装进口现货假一赔十	询价
深圳诚思涵科技有限公司	CEP50N06	TI	24+	VQFN	18766	公司现货库存,支持实单	询价
深圳市金芯世纪电子有限公司	CEP50N06	CET/華瑞	22+	TO-220	100000	代理渠道/只做原装/可含税	询价
深圳市科芯源微电子有限公司	CEP50N06	CET	25+	TO-220	244	原装正品,假一罚十!	询价
深圳市恒达亿科技有限公司	CEP50N06	TOP220	25+	CET	3200	全新原装、诚信经营、公司现货销售!	询价
深圳市一线半导体有限公司	CEP50N06	CET	24+	TO2203	150		询价
深圳市明嘉莱科技有限公司	CEP50N06	CET/華瑞	25+	TO-220	156757	明嘉莱只做原装正品现货	询价
齐创科技(上海,北京,青岛)有限公司	CEP50N06	ROHM	23+	TO220	5000	原装正品,假一罚十	询价

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CEP5产品属性

CEP5供应商更多...

CEP5芯片相关品牌

CEP5规格书下载地址

CEP5参数引脚图相关

CEP5数据表相关新闻

CERN科学家设计出能在设施之间运输反物质的装置

CEM-1212C

CES-434313-28PM-67

CEM-1205C

CEM9435

CeraCharge电池Z62000Z2910Z01Z05

DdatasheetPDF页码索引